Semiconductor device including nonvolatile memory configured to switch between a reference current reading system and a complementary reading system

ABSTRACT

The present invention provides a semiconductor device including a nonvolatile memory of which the memory size of a data area and the memory size of a code area can be freely changed. The semiconductor device according to one embodiment includes a nonvolatile memory which can switch between a reference current reading system which performs data read by comparing a current flowing through a first memory cell as a read target and the reference current and a complementary reading system which performs data read by comparing currents flowing through a first memory cell and a second memory cell storing complementary data, as a read target.

CROSS-REFERENCE TO RELATED APPLICATIONS

The disclosure of Japanese Patent Application No. 2014-179180 filed onSep. 3, 2014 including the specification, drawings and abstract isincorporated herein by reference in its entirety.

BACKGROUND

The present invention relates to a semiconductor device, and is usedsuitably for a semiconductor device such as a microcomputer whichincludes a nonvolatile memory.

As a storing system of a nonvolatile memory, there are a system in whichdata of “1” or “0” is stored in each memory cell (for example, refer toJapanese Unexamined Patent Application Publication No. 2004-318941(Patent Document 1)) and a system in which complementary data of “1” and“0” are stored in a pair of memory cells (for example, refer to JapaneseUnexamined Patent Application Publication No. 2008-117510 (PatentDocument 2)). In the former system, data of a memory cell is read bycomparing a current which flows through the memory cell with a referencecurrent (hereinafter called a reference current reading system). In thelatter system, data of a memory cell pair is read by comparing currentswhich flow through the memory cells configuring the pair (hereinaftercalled a complementary reading system).

Compared with the complementary reading system, the reference currentreading system has a fast read speed and is capable of increasing thestorage capacity (capable of decreasing the memory size). However, thereference current reading system has a demerit that the rewritable countis small compared with the complementary reading system, since it isnecessary to fully erase the memory cell. Therefore, the referencecurrent reading system is used in the code area where rewrite does nottake place frequently.

On the other hand, compared with the reference current reading system,the complementary reading system has a small storage capacity (a largememory size); however the complementary reading system is capable ofreducing the read current and increasing the rewritable count.Therefore, the complementary reading system is used in the data areawhere rewrite takes place frequently.

Freescale Semiconductor, Inc. provides a processor which mounts anon-chip flash memory with the function of EEE (Enhanced EEPROM) (referto Non-patent Document 1). The flash memory with the EEE functionconcerned can select the case where priority is given to the reductionof memory size, and the case where priority is given to the retention(holding capability). However, its concrete hardware configuration isunknown.

PATENT DOCUMENT

-   (Patent Document 1) Japanese Unexamined Patent Application    Publication No. 2004-318941-   (Patent Document 2) Japanese Unexamined Patent Application    Publication No. 2008-117510

NON-PATENT DOCUMENT

-   (Non-patent Document 1) Melissa Hunter and Derrick Klotz; “Using the    Kinetis Family Enhanced EEPROM Functionality”, Freescale    Semiconductor Application Note, Document Number: AN4282, Rev. 0,    March 2011

SUMMARY

As described above, in the case of a nonvolatile memory in the relatedart, the reference current reading system is employed in the code area,and the complementary reading system is employed in the data area. Inthis case, which of the reference current reading system and thecomplementary reading system is employed is decided by hardware.Therefore, there is an inconvenient issue in which a user is unable tofreely change the memory size of the data area and the memory size ofthe code area, depending on an application.

The other issues and new features of the present invention will becomeclear from the description of the present specification and theaccompanying drawings.

A semiconductor device according to one embodiment of the presentinvention includes a nonvolatile memory which can switch between areference current reading system and a complementary reading system.

According to the one embodiment described above, it is possible tofreely change the memory size of a data area and the memory size of acode area, in the nonvolatile memory.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating the configuration of asemiconductor device according to Embodiment 1;

FIGS. 2A and 2B are explanatory drawings illustrating the configurationand operation of a memory cell (in the case of a split-gate flash memoryelement);

FIGS. 3A-3C are explanatory drawings illustrating the configuration andoperation of a memory cell (in the case of a stacked-gate flash memorycell);

FIG. 4A-4C are explanatory drawings illustrating the cell data in thecomplementary reading system;

FIGS. 5A and 5B are explanatory drawings illustrating the cell data inthe reference current reading system;

FIG. 6 is a block diagram illustrating the configuration of a flashmemory module illustrated in FIG. 1;

FIG. 7 is a drawing illustrating the detailed configuration of ahierarchy sense amplifier band illustrated in FIG. 6;

FIG. 8 is a drawing illustrating a path of a memory cell current in thecomplementary reading system in the circuit configuration of FIG. 7;

FIGS. 9A and 9B are drawings illustrating the configuration of a drivercircuit for driving each control signal line in the hierarchy senseamplifier band illustrated in FIG. 7;

FIG. 10 is a drawing illustrating an example of a generating circuit ofa control signal CMPLON illustrated in FIG. 9;

FIG. 11 is a circuit diagram illustrating an example of theconfiguration of a sense amplifier illustrated in FIG. 7 and FIG. 8;

FIG. 12 is a circuit diagram illustrating an example of theconfiguration of an output buffer illustrated in FIG. 6;

FIG. 13 is a drawing illustrating an example of a circuit for generatinga control signal SEN_OR illustrated in FIG. 12;

FIG. 14 is a timing chart illustrating an example of read operation inthe reference current reading system;

FIG. 15 is a timing chart illustrating an example of read operation inthe complementary reading system;

FIG. 16 is a circuit diagram illustrating the details of a write-systempath illustrated in FIG. 6;

FIG. 17 is a circuit diagram illustrating the details of each of programlatch circuits illustrated in FIG. 16;

FIG. 18 is a drawing illustrating the detailed configuration of ahierarchy sense amplifier band according to Embodiment 2;

FIG. 19 is a drawing illustrating a path of a memory cell current in thecomplementary reading system in the circuit configuration of FIG. 18;

FIGS. 20A and 20B are drawings illustrating the configuration of adriver circuit for driving each control signal line in the hierarchysense amplifier band illustrated in FIG. 18 and FIG. 19;

FIG. 21 is a timing chart illustrating an example of read operation inthe reference current reading system according to Embodiment 2;

FIG. 22 is a timing chart illustrating an example of read operation inthe complementary reading system according to Embodiment 2;

FIG. 23 is a block diagram illustrating the configuration of a flashmemory module in a semiconductor device according to Embodiment 3;

FIG. 24 is a drawing illustrating the detailed configuration of a columnselection unit and a read sense amplifier band illustrated in FIG. 23;

FIG. 25 is a drawing illustrating a path of a memory cell current in thecomplementary reading system in the circuit configuration of FIG. 24;

FIGS. 26A and 26B are drawings illustrating the configuration of adriver circuit for driving each control signal line in the read senseamplifier band and the column selection unit illustrated in FIG. 24;

FIG. 27 is a timing chart illustrating an example of read operation inthe reference current reading system according to Embodiment 3; and

FIG. 28 is a timing chart illustrating an example of read operation inthe complementary reading system according to Embodiment 3.

DETAILED DESCRIPTION

Hereinafter, each embodiment is described in detail with reference toaccompanying drawings. The following explains a flash memory as anexample of the nonvolatile memory device. However, the nonvolatilememory device is not restricted to a flash memory in particular, as longas it is an electrically erasable-and-programmable nonvolatile memory,such as an EEPROM (Electrically Erasable Programmable Read-Only Memory).In the following explanation, the same symbol or reference numeral isattached to the same or corresponding element and the repeatedexplanation thereof will be omitted.

<Embodiment 1>

(A Microcomputer)

FIG. 1 is a block diagram illustrating the configuration of asemiconductor device according to Embodiment 1. FIG. 1 illustrates theconfiguration of a microcomputer (MCU) 1 as an example of thesemiconductor device.

With reference to FIG. 1, the microcomputer 1 is formed in onesemiconductor chip such as single crystal silicon by employingintegrated circuit manufacturing technology for a CMOS (ComplementaryMetal Oxide Semiconductor), for example.

The microcomputer 1 includes a central processing unit (CPU) 2, a randomaccess memory (RAM) 5, and a flash memory module (FMDL) 6, asillustrated in FIG. 1. The central processing unit 2 includes aninstruction controlling part and an execution part, and executes aninstruction. The random access memory 5 is used for a work space of thecentral processing unit 2. The flash memory module 6 is provided as anonvolatile memory module to store data and a program.

The microcomputer 1 further includes a direct memory access controller(DMAC) 3, a bus interface circuit (BIF) 4, a flash sequencer (FSQC) 7,external I/O ports (PRT) 8 and 9, a timer (TMR) 10, a clock pulsegenerator (CPG) 11, a high speed bus (HBUS) 12, and a peripheral bus(PBUS) 13.

The bus interface circuit 4 performs bus interface control or bus bridgecontrol between the high speed bus 12 and the peripheral bus 13. Theflash sequencer 7 performs command access control to the flash memorymodule (FMDL) 6. The clock pulse generator 11 generates an internalclock CLK for controlling the microcomputer 1.

Although not limited in particular, the bus architecture of themicrocomputer 1 in the case of FIG. 1 has the high speed bus (HBUS) 12and the peripheral bus (PBUS) 13. Although not limited in particular,each of the high speed bus 12 and the peripheral bus 13 has a data bus,an address bus, and a control bus. By providing two buses of the highspeed bus 12 and the peripheral bus 13, it is possible to mitigate theload of the bus and to guarantee a high-speed access operation, comparedwith the case where all the circuits are coupled to a common bus.

To the high speed bus 12, the central processing unit 2, the directmemory access controller 3, the bus interface circuit 4, the randomaccess memory 5, and the flash memory module 6 are coupled. To theperipheral bus 13, the flash sequencer 7, the external I/O ports 8 and9, the timer 10, and the clock pulse generator 11 are coupled.

The microcomputer 1 further includes a clock terminal XTAL/EXTAL towhich an oscillator is coupled or an external clock is supplied, anexternal hardware standby terminal STB for indicating a standby state,an external reset terminal RES for indicating a reset, an external powerterminal Vcc, and an external ground terminal Vss.

In FIG. 1, the flash sequencer 7 as a logic circuit and the flash memorymodule 6 formed in an array are designed using different CAD tools.Accordingly, they are shown as separate circuit blocks for convenience.However, they configure a flash memory 16 in combination.

The flash memory module 6 is coupled to the high speed bus (HBUS) 12 viathe read-only high-speed access port (HACSP) 15. The CPU 2 or the DMAC 3can read-access the flash memory module 6 via the high-speed access port15 from the high speed bus 12. When the CPU 2 or the DMAC 3write-accesses and initializes the flash memory module 6, they issue acommand to the flash sequencer 7 via the peripheral bus (PBUS) 13through the intermediary of the bus interface 4. Responding to thiscommand, the flash sequencer 7 performs control of the initializationand the write operation to the flash memory module, via a low-speedaccess port (LACSP) from the peripheral bus PBUS.

(Configuration and Operation of a Memory Cell)

FIGS. 2A and 2B and FIGS. 3A-3C are explanatory drawings illustratingthe configuration and operation of a memory cell. FIGS. 2A and 2Billustrate the case of a split-gate flash memory element, and FIGS.3A-3C illustrate the case of a stacked-gate flash memory cell.

With reference to FIG. 2A, the split-gate flash memory element includesa control gate CG and a memory gate MG which are arranged over a channelforming region between a source region and a drain region via a gateinsulating film. A charge trapping region such as silicon nitride (SiN)is arranged between the memory gate MG and the gate insulating film. Thecontrol gate CG is coupled to a word line WL, and the memory gate MG iscoupled to a memory gate selection line MGL. A drain region (or sourceregion) on the side of the control gate CG is coupled to a bit line BL,and a source region (or drain region) on the side of the memory gate MGis coupled to a source line SL.

FIG. 2B illustrates an example of the voltage setup at the bit line BL,the control gate CG, the memory gate MG, the source line SL, and a wellregion (WELL), at the time of read and write/erase of the split-gateflash memory element.

Specifically, in order to decrease a threshold voltage Vth of the memorycell, it is set such as BL=1.5V, CG=0.0V, MG=−10V, SL=6V, and WELL=0V,for example. Accordingly, among electrons and holes which are generatedby a high electric field between the well region (WELL) and the memorygate MG, holes are injected into the charge trapping region (SiN) fromthe well region (WELL). This processing is performed in units of pluralmemory cells which share the memory gate.

In order to increase the threshold voltage Vth of the memory cell, it isset such as BL=0V, CG=1.5V, MG=10V, SL=6, and WELL=0V, for example. Inthis case, when a write current flows into the bit line from the sourceline SL, hot electrons are generated in the boundary portion of thecontrol gate and the memory gate, and the generated hot electrons areinjected into the charge trapping region (SiN). The electron injectionis decided depending on whether the bit-line current is flowed or not.Therefore, this processing is controlled in units of bits.

At the time of read, it is set such as BL=1.5V, CG=1.5V, MG=0V, SL=0V,and WELL=0V, for example. When the threshold voltage Vth of the memorycell is low, the resistance of the memory cell becomes small (ON state),and when the threshold voltage Vth is high, the resistance of the memorycell becomes large (OFF state).

The stacked-gate flash memory element illustrated in FIG. 3A is formedby stacking a floating gate FG and a control gate CG over a channelforming region between a source region and a drain region via a gateinsulating film. The control gate CG is coupled to a word line WL. Thedrain region is coupled to a bit line BL, and the source region iscoupled to a source line SL.

FIGS. 3B and 3C illustrate an example of the voltage setup of the bitline BL, the word line WL, the source line SL, and the well region(WELL), at the time of read and write/erase of the stacked-gate flashmemory element. FIG. 3 (B) illustrates an example of the voltage setupin the case of increasing the threshold voltage Vth by a hot carrierwriting system, and decreasing the threshold voltage Vth by thedischarge of electrons to the well region WELL. FIG. 3C illustrates anexample of the voltage setup in the case of increasing the thresholdvoltage Vth by an FN tunnel writing system, and decreasing the thresholdvoltage Vth by the discharge of electrons to the bit line BL.

In the present specification, the control gate CG is also called acontrol electrode, the impurity region coupled to the bit line BL isalso called a first main electrode, and the impurity region coupled tothe source line SL is also called a second main electrode.

(On the Reference Current Reading System and the Complementary ReadingSystem)

FIG. 4A-4C are explanatory-drawings illustrating the cell data in thecomplementary reading system. FIGS. 5A and 5B are explanatory drawingsillustrating the cell data in the reference current reading system.

As the information storage system in the flash memory module, there area complementary reading system in which the storage of one bit ofinformation is realized by use of two nonvolatile memory cells, and areference current reading system in which the storage of one bit ofinformation is realized by use of one nonvolatile memory cell.

With reference to FIG. 4A-FIG. 4C, in the complementary reading system,two rewritable nonvolatile memory cells MC1 and MC2 specified in advancein a memory array are used as a twin cell expressing one bit. In thepresent specification, the memory cell MC1 is called a positive cell andthe memory cell MC2 is called a negative cell. Each of the memory cellsMC1 and MC2 can hold a cell data “1” (a low threshold voltage state; astate where the threshold voltage is smaller than an erase verifyinglevel), or a cell data “0” (a high threshold voltage state; a statewhere the threshold voltage is equal to or greater than the eraseverifying level).

The information storage by a twin cell is realized by storingcomplementary data in the nonvolatile memory cells MC1 and MC2 as a twincell. That is, as illustrated in FIG. 4A, a twin cell data “0”corresponds to the state where the positive cell MC1 holds a cell data“0” and the negative cell MC2 holds a cell data “1.” As illustrated inFIG. 4B, a twin cell data “1” corresponds to the state where thepositive cell MC1 holds a cell data “1” and the negative cell MC2 holdsa cell data “0.” As illustrated in FIG. 4C, the state where both of thepositive cell MC1 and the negative cell MC2 of the twin cell hold a celldata “1” corresponds to an initialization state, and the twin cell datais indefinite.

With reference to FIG. 5A and FIG. 5B, in the reference current readingsystem, one bit of data is stored in each rewritable nonvolatile memorycell MC in a memory array. Accordingly, in the reference current readingsystem, there is no distinction between a positive cell and a negativecell. As illustrated in FIG. 5A, a cell data “1” corresponds to thestate where the memory cell MC holds a cell data “1” (a low thresholdvoltage state). As illustrated in FIG. 5B, a cell data “0” correspondsto the state where the memory cell MC holds a cell data “0” (a highthreshold voltage state).

(Flash Memory Module)

FIG. 6 is a block diagram illustrating the configuration of the flashmemory module illustrated in FIG. 1. In FIG. 6, the up and downdirection of the page space is called a column direction, and the leftand right direction of the page space is called a row direction. Withreference to FIG. 6, the flash memory module 6 includes a memory mat 20,an output buffer (OBUF) 34, a first row decoder (RDEC1) 30, and a secondrow decoder (RDEC2) 31.

The memory mat 20 includes a hierarchy sense amplifier band 23 andmemory arrays 22 and 24 provided on both sides of the hierarchy senseamplifier band in the column direction, as one constituent unit(hereinafter called a memory block 21). Plural pieces of such a memoryblock 21 are arranged in the column direction in the memory mat 20 (FIG.6 illustrates only one piece of the memory block 21 typically). In thefollowing, the memory array 22 is also called an upside memory array 22,and the memory array 24 is also called a downside memory array 24.

The memory mat 20 includes plural word lines WL extending in the rowdirection, plural memory gate selection lines MGL extending in the rowdirection, plural source lines SL extending in the row direction, andplural sub bit lines SBL extending in the column direction. Thesecontrol signal lines are provided for each of the memory arrays 22 and24.

The memory mat 20 includes plural write-system main bit lines WMBL and aread-system main bit line RWBL which are provided in common in thememory mat 20. Each of the write-system main bit lines WMBL correspondsto the plural sub bit lines SBL, and is coupled to the corresponding subbit line SBL via sub-bit-line selectors 26U and 26D. That is, thewrite-system main bit line WMBL and the sub bit line SBL arehierarchized.

Plural memory cells MC arranged in a matrix are disposed in the memoryarrays 22 and 24. Each row of the memory array corresponds to each ofthe word lines WL, and corresponds to each of the memory gate selectionlines MGL. That is, the word line WL and the memory gate selection lineMGL are provided in units of rows of the memory array. Each column ofthe memory array corresponds to each of the sub bit lines SBL. That is,the sub bit line SBL is provided in units of columns of the memoryarray. The source line SL is coupled in common to plural rows of thememory array. At the time of data read, the source line SL is coupled tothe ground node VSS.

Note that FIG. 6 illustrates the case where each memory cell is asplit-gate flash memory element. Each memory cell may be a stacked-gateflash memory element. In that case, the memory gate selection line MGLis not provided.

The flash memory module 6 illustrated in FIG. 6 has features that it ispossible to switch between the complementary reading system in which thestorage of one bit of information is accomplished by use of twononvolatile memory cells and the reference current reading system inwhich the storage of one bit of information is accomplished by use ofone nonvolatile memory cell.

In the complementary reading system, one pair of rewritable nonvolatilememory cells coupled to the common word line WL are employed as a twincell. The memory array 24 of FIG. 6 illustrates typically one pair ofmemory cells MC1 and MC2 which are coupled to the common word line WL.Similarly, the memory array 22 illustrates typically one pair of memorycells MC3 and MC4 which are coupled to the common word line WL. In thepresent specification, the memory cells MC1 and MC3 are called apositive cell, and the memory cells MC2 and MC4 are called a negativecell.

In the memory cells MC1 and MC2 which configures a twin cell, eachmemory gate MG is coupled to the corresponding common memory gateselection line MGL, and each control gate CG is coupled to thecorresponding common word line WL. The source of each memory cell iscoupled to the common source line SL. The memory cells MC1 and MC2 arefurther coupled to the corresponding sub bit line SBL in units ofcolumns.

In the reference current reading system, one bit of data is stored ineach of the memory cells MC1-MC4. In this case, there is no distinctionbetween a positive cell and a negative cell.

The hierarchy sense amplifier band 23 includes a sense amplifier SA, aread column selector 25, and sub-bit-line selectors 26U and 26D.

The sense amplifier SA includes a first and a second input node, andamplifies the difference of a current which flows through a first outputsignal line CBLU coupled to the first input node and a current whichflows through a second output signal line CBLD coupled to the secondinput node, thereby outputs the comparison result of both current values(in the following, the first output signal line CBLU is also called anupside output signal line, and the second output signal line CBLD isalso called a downside output signal line). The output signal of thesense amplifier SA is transferred to the output buffer (OBUF) 34 via aread-system main bit line RMBL extending in the column direction. Theoutput buffer 34 is coupled to a data bus HBUS-D of the high speed busHBUS. The output buffer 34 supplies the output of the sense amplifier SAto the CPU 2, the DMAC 3, etc. illustrated in FIG. 1 via the high speeddata bus HBUS-D.

The read column selector 25 includes PMOS transistors 51U-54U and51D-54D. By switching these PMOS transistors, the read column selector25 functions as a coupling switch unit which changes the couplingbetween each sub bit line SBL and the output signal lines CBLU and CBLDdescribed above (Hereinafter, the MOS transistor employed as a switch asdescribed above is also called a MOS transistor switch). Fundamentally,the sub bit line SBL employed by the upside memory array 22 is coupledto the upside output signal line CBLU via PMOS (Positive-channel MOS)transistor switches (such as 51U, 53U; 52U, 54U). Similarly, the sub bitline SBL employed by the downside memory array 24 is coupled to thedownside output signal line CBLD via PMOS transistor switches (such as51D, 53D; 52D, 54D).

The read column selector 25 further includes PMOS transistor switches55U and 55D for coupling the negative cell to the output signal line(CBLU or CBLD) opposite to the coupling destination in theabove-described fundamental case, when the complementary reading systemis employed. For example, when reading the data of the twin cellconfigured with the memory cells MC1 and MC2, the memory cell MC1 iscoupled to the downside output signal line CBLD via the PMOS transistorswitches 53D and 51D. The memory cell MC2 is coupled to the upsideoutput signal line CBLU via the PMOS transistor switches 54D and 55D.Similarly, when reading the data of the twin cell configured with thememory cells MC3 and MC4, the memory cell MC3 is coupled to the upsideoutput signal line CBLU via the PMOS transistor switches 53U and 51U.The memory cell MC4 is coupled to the downside output signal line CBLDvia the PMOS transistor switches 54U and 55U.

In the reference current reading system, the above-described PMOStransistor switches 55U and 55D are always in an OFF state. For example,when reading the data of the memory cell MC2 provided in the downsidememory array 24, the memory cell MC2 is coupled to the downside outputsignal line CBLD via the PMOS transistor switches 54D and 52D. Theupside output signal line CBLU is coupled to a reference current source(not shown). At this time, the sub bit line SBL provided in the memorycell MC4 is also coupled to the upside output signal line CBLU bysetting the PMOS transistor switches 52U and 54U in an ON state. This isbecause wiring capacitance equivalent to wiring capacitance of the subbit line SBL coupled to the downside output signal line CBLD is to beadded to the upside output signal line CBLU as well.

The sub-bit-line selectors 26U and 26D include NMOS (Negative-channelMOS) transistor switches 60U and 60D. By switching ON and OFF of theseNMOS transistor switches 60U and 60D, the corresponding sub bit line SBLis selectively coupled to the write-system main bit line WMBL.Specifically, a sub bit line SBL provided in the memory array 22 iscoupled to the corresponding main bit line WMBL via the NMOS transistorswitch 60U. A sub bit line SBL provided in the memory array 24 iscoupled to the corresponding main bit line WMBL via the NMOS transistorswitch 60D. In Embodiment 1, the sub-bit-line selectors 26U and 26D areemployed only at the time of data write, and are not employed at thetime of data read.

The first row decoder (RDEC1) 30 includes a driver 180 for activatingthe word line WL selectively. The second row decoder (RDEC2) 31 includesa driver 182 for activating the memory gate line MGL selectively, and adriver 183 for activating the source line SL selectively. The second rowdecoder 31 further includes a driver 184 for activating selectively acontrol signal line ZL which controls the sub-bit-line selectors 26U and26D. This control signal line ZL is coupled to the gates of the NMOStransistor switches 60U and 60D provided in the sub-bit-line selectors26U and 26D. The selection operation by the first row decoder 30 and thesecond row decoder 31 follows the address information supplied to thehigh-speed access port (HACSP) 15 illustrated in FIG. 1 in the readaccess, and follows the address information supplied to the low-speedaccess port (LACSP) 14 illustrated in FIG. 1 in the write operation ofdata and the initialization operation

(Erase Operation)

The flash memory module 6 further includes an input/output buffer(IOBUF) 33, a main-bit-line voltage control circuit 39, a column decoder(CDEC) 32, a rewriting column selector 38, a verification circuit 37, apower supply circuit (VPG) 35, and a timing generator (TMG) 36.

The input/output buffer (IOBUF) 33 is coupled to a data bus PBUS-D(hereinafter called a peripheral data bus PBUS-D) of the peripheral bus(PBUS) 13, via the low-speed access port (LACSP) 14. The input/outputbuffer 33 is supplied with write data via the peripheral data busPBUS-D. Furthermore, the input/output buffer 33 outputs a determinationresult of the verification sense amplifier VSA to the peripheral databus PBUS-D.

The main-bit-line voltage control circuit 39 includes a program latchcircuit PRGL provided corresponding to the write-system main bit lineWMBL. The program latch circuit PRGL holds the write data supplied viathe input/output buffer 33. In the case of data write, a write currentaccording to the data (“1” or “0”) held at the program latch circuitPRGL flows through the write-system main bit line WMBL selectively.

The column decoder (CDEC) 32 generates a control signal for selectingthe write-system main bit line WMBL according to the address informationsupplied to the low-speed access port (LACSP) 14 of FIG. 1.

The rewriting column selector 38 includes an NMOS transistor switch 80Bfor coupling selectively each of the write-system main bit lines WMBLand the verification sense amplifier VSA, and an NMOS transistor switch80L for coupling selectively the input/output buffer 33 and the programlatch circuit PRGL. The NMOS transistor switches 80B and 80L switch toON or OFF according to the control signal from the column decoder 32.When the NMOS transistor switch 80L is set to ON, write data is suppliedfrom the input/output buffer 33 to the corresponding program latchcircuit PRGL.

The verification circuit 37 determines whether the data of the memorycell as a write target and the write data held in the program latchcircuit PRGL coincide, and determines whether the desired data iswritten in the memory cell as the write target. The verification circuit37 includes a verification sense amplifier VSA for reading the data ofthe memory cell as the write target. The verification sense amplifierVSA is coupled to the write-system main bit line WMBL corresponding tothe memory cell as the write target, by the selection operation of therewriting column selector 38 (that is, according to the correspondingNMOS transistor switch 80B set to ON).

The power supply circuit (VPG) 35 generates various operating voltagesnecessary for read, write, and initialization (erase). Among thevoltages generated, a supply voltage (voltage of the power supply nodeVDD) is a supply voltage of the CMOS circuit in the semiconductordevice. The voltages supplied to the memory gate MG, the control gateCG, the source line SL, the well (WELL), and the bit line BL aregenerated and supplied by the power supply circuit (VPG) 35 under thecontrol of the flash sequencer 7.

The timing generator (TMG) 36 generates an internal control signal forspecifying internal operation timing, according to an access strobesignal supplied from the CPU 2 of FIG. 1 to the high-speed access port(HACSP) 15 and an access command supplied from the flash sequencer(FSQC) 7 to the high-speed access port 15. The controller of the flashmemory 16 is configured with the flash sequencer (FSQC) 7 illustrated inFIG. 1 and the timing generator 36.

(Details of the Read-System Circuit)

FIG. 7 is a drawing illustrating the detailed configuration of thehierarchy sense amplifier band illustrated in FIG. 6. Specifically, FIG.7 illustrates the configuration of the sense amplifier SA, the readcolumn selector 25, and the downside sub-bit-line selector 26D among thehierarchy sense amplifier band 23, and the configuration of the downsidememory array 24 in the mth row, illustrated in FIG. 6. FIG. 7 alsoillustrates the configuration of a charging and discharging circuit 27Dprovided between the read column selector 25 and the sub-bit-lineselector 26D. Although not shown in FIG. 7, a charging and dischargingcircuit 27U having the similar configuration of the charging anddischarging circuit 27D is provided also between the read columnselector 25 and the upside sub-bit-line selector 26U.

FIG. 7 illustrates typically four write-system main bit linesWMBL0-WMBL3, eight sub bit lines SBL_U0-SBL_U7 provided in the upsidememory array 22, eight sub bit lines SBL_D0-SBL_D7 provided in thedownside memory array 24, and one read-system main bit line RMBL0.Although not shown in FIG. 7, these bit lines are repeatedly provided inthe row direction in the actual memory cell module 6.

Two sub bit lines SBL are assigned to one write-system main bit lineWMBL for every memory array. Specifically, in the downside memory array24, the sub bit lines SBL_D2×i and SBL_D2×i+1 (i=0-3) are assigned tothe write-system main bit line WMBLi. In the upside memory array 22, thesub bit lines SBL_U2×i and SBL_U2×i+1 (i=0-3) are assigned to thewrite-system main bit line WMBLi.

In the complementary reading system, memory cells which are coupled tomutually different sub bit lines SBL, and coupled to the common wordline WL configure a twin cell. Specifically, in the case of FIG. 7,among the memory cells coupled to the sub bit lines SBL_D0 and SBL_D4,the memory cells coupled to the common word line WL configure a twincell. Similarly, the memory cells coupled to the sub bit lines SBL_Diand SBL_Di+4 (i=0-3) configure a twin cell. The memory cells coupled tothe sub bit lines SBL_D0-SBL_D3 are used as a positive cell, and thememory cells coupled to the sub bit lines SBL_D4-SBL_D7 are used as anegative cell. Same applies to the memory cells provided in the upsidememory array 22.

The sub-bit-line selector 26D includes NMOS transistor switches60D0-60D7 respectively corresponding to the sub bit lines SBL_D0-SBL_D7,and control signal lines ZL_D0 and ZL_D1. Each of the NMOS transistorswitches 60D0-60D7 is coupled between the corresponding sub bit line SBLand the write-system main bit line WMBL assigned to the correspondingsub bit line SBL. The control signal line ZL_D0 is coupled to the gatesof the even-numbered NMOS transistor switches 60D0, 60D2, 60D4, and60D6, and the control signal line ZL_D1 is coupled to the gates of theodd-numbered NMOS transistor switches 60D1, 60D3, 60D5, and 60D7.

The charging and discharging circuit 27D includes PMOS transistorswitches 58D0 which correspond individually to the even-numbered sub bitlines SBL_D0, SBL_D2, SBL_D4, and SBL_D6, PMOS transistor switches 58D1which correspond individually to the odd-numbered sub bit lines SBL_D1,SBL_D3, SBL_D5, and SBL_D7, and control signal lines CH_D0N and CH_D1N.Each of the PMOS transistor switches 58D0 and 58D1 is coupled betweenthe corresponding sub bit line SBL and the power supply node VDD. Thecontrol signal line CH_D0N is coupled to the gates of the even-numberedPMOS transistors 58D0, and the control signal line CH_D1N is coupled tothe gates of the odd-numbered PMOS transistors 58D1.

The charging and discharging circuit 27D further includes NMOStransistor switches 59D0 which correspond individually to theeven-numbered sub bit lines SBL_D0, SBL_D2, SBL_D4, and SBL_D6, NMOStransistor switches 59D1 which correspond individually to theodd-numbered sub bit lines SBL_D1, SBL_D3, SBL_D5, and SBL_D7, andcontrol signal lines DC_D0 and DC_D1. Each of the NMOS transistorswitches 59D0 and 59D1 is coupled between the corresponding sub bit lineSBL and the ground node VSS. The control signal line DC_D0 is coupled tothe gates of the even-numbered NMOS transistors 59_D0, and the controlsignal line DC_D1 is coupled to the gates of the odd-numbered NMOStransistors 59D1.

The configuration of the charging and discharging circuit 27Ucorresponds to the configuration of the discharging circuit 27Ddescribed above in which the subscript D is replaced with the subscriptU. Accordingly, the explanation thereof is not repeated.

The read column selector 25 includes PMOS transistor switches 51D, 52D,53D0-53D3, and 54D0-54D3, for coupling selectively the sub bit linesSBL_D0-SBL_D7 provided in the downside memory array 24 to the downsideoutput signal line CBLD. The read column selector 25 further includesPMOS transistor switches 51U, 52U, 53U0-53U3, and 54U0-54U3, forcoupling selectively the sub bit lines SBL_U0-SBL_U7 provided in theupside memory array 22 to the upside output signal line CBLU.

The concrete connecting relation of the above-described PMOS transistorswitch is as follows. First, the PMOS transistor switches 53D0-53D3correspond to the sub bit lines SBL_D0-SBL_D3, respectively, and each iscoupled between the corresponding sub bit line SBL and a common node62D, respectively. The PMOS transistor switch 51D is coupled between thecommon node 62D and the downside output signal line CBLD. The PMOStransistor switches 54D0-54D3 correspond to the sub bit linesSBL_D4-SBL_D7, respectively, and each is coupled between thecorresponding sub bit line SBL and a common node 63D, respectively. ThePMOS transistor switch 52D is coupled between the common node 63D andthe downside output signal line CBLD.

Similarly, the PMOS transistor switches 53U0-53U3 correspond to the subbit lines SBL_U0-SBL_U3, respectively, and each is coupled between thecorresponding sub bit line SBL and a common node 62U, respectively. ThePMOS transistor switch 51U is coupled between the common node 62U andthe upside output signal line CBLU. The PMOS transistor switches54U0-54U3 correspond to the sub bit lines SBL_U4-SBL_U7, respectively,and each is coupled between the corresponding sub bit line SBL and acommon node 63U, respectively. The PMOS transistor switch 52U is coupledbetween the common node 63U and the upside output signal line CBLU.

The read column selector 25 further includes control signal linesYRB_D0N, YRB_D1N, YRA_D0N-YRA_D3N, YRB_U0N, YRB_U1N, andYRA_U0N-YRA_U3N, for switching ON and OFF of the PMOS transistorswitches described above. Specifically, the control signal lines YRB_D0Nand YRB_D1N are coupled to the gates of the PMOS transistor switches 51Dand 52D, respectively. The control signal line YRA_DiN (i=0-3) iscoupled to the gates of the PMOS transistor switches 53Di and 54Di. Eachcontrol signal line YRA_DiN is coupled to two PMOS transistor switches53Di and 54Di in order to select simultaneously two sub bit lines SBLcorresponding to a twin cell.

Similarly, the control signal lines YRB_U0N and YRB_U1N are coupled tothe gates of the PMOS transistor switches 51U and 52U, respectively. Thecontrol signal line YRA_UiN (i=0-3) is coupled to the gate of the PMOStransistor switches 53Ui and 54Ui.

The read column selector 25 further includes constant current sourcesCS1 and CS2, NMOS transistor switches 56U and 57U for switching couplingbetween these constant current sources CS1 and CS2 and the upside outputsignal line CBLU, respectively, and NMOS transistor switches 56D and 57Dfor switching coupling between these constant current sources CS1 andCS2 and the downside output signal line CBLD, respectively. The NMOStransistor switches 56U and 56D are coupled between the common nodes 62Uand 62D and the constant current source CS1, respectively. The NMOStransistor switches 57U and 57D are coupled between the common nodes 63Uand 63D and the constant current source CS2, respectively. The readcolumn selector 25 further includes a control signal line REF_U coupledto the gates of the NMOS transistor switches 56U and 57U, and a controlsignal line REF_D coupled to the gates of the NMOS transistor switches56D and 57D.

The above-described constant current sources CS1 and CS2 are configuredwith an NMOS transistor to which a constant voltage is applied at thegate thereof, for example. It is also preferable to configure thehierarchy sense amplifier band 23 so that a reference cell correspondingto the constant current sources CS1 and CS2 is provided in each memoryarray and a current flowing through the reference cell is compared witha current flowing through a memory cell as a read target.

The read column selector 25 further includes a PMOS transistor switch55D for switching the coupling between the negative cell of the downsidememory array 24 and the upside output signal line CBLU, and a PMOStransistor switch 55U for switching the coupling between the negativecell of the upside memory array 22 and the downside output signal lineCBLD. The PMOS transistor switch 55D is coupled between the common node63D and the upside output signal line CBLU, and the PMOS transistorswitch 55U is coupled between the common node 63U and the downsideoutput signal line CBLD.

The reference symbol ending with N in the notation of the control signalline described above designates that the control signal line concernedis activated by a low level (L level) signal and the PMOS transistorswitch coupled to the activated control signal line concerned is set toON. The reference symbol not ending with N in the notation of thecontrol signal line described above designates that the control signalline concerned is activated by a high level (H level) signal and theNMOS transistor switch coupled to the activated control signal lineconcerned is set to ON.

(On the Path of a Memory Cell Current and a Reference Current in theReference Current Reading System)

Next, with reference to FIG. 7, the following explains on the path of acell current Ic and the path of a reference current Iref, in reading thedata of the memory cell MC1 in the reference current reading system.

When reading the data of the memory cell MC1, a word line WLm coupled tothe control gate of memory cell MC1 is activated to an H level.Furthermore, a cell current Ic is generated by activating the controlsignal lines YRA_D0N and YRB_D0N. The cell current Ic flows in thedirection from the sense amplifier SA to the source line SL, via theoutput signal line CBLD, the PMOS transistor switches 51D and 53D0, thesub bit line SBL_D0, and the memory cell MC1 in this order. At the timeof data read, the source line SL is coupled to the ground node VSS.

In order to generate the reference current Iref, the control signallines YRB_U0N and REF_U are activated. The reference current Iref flowsin the direction from the sense amplifier SA to the ground node VSS, viathe output signal line CBLU, the PMOS transistor switch 51U, the NMOStransistor switch 56U, and the current source CS1 in this order. Themagnitude of the reference current Iref is adjusted by the currentsource CS1.

When generating the reference current Iref, the PMOS transistor switch53U0 is further set to ON by activating the control signal line YRA_U0N.Accordingly, the wiring capacitance of the sub bit line SBL_U0 is addedto the output signal line CBLU on the side of the current source CS1.The wiring capacitance of the sub bit line SBL_U0 has the almost samevalue as the wiring capacitance of the sub bit line SBL_D0 coupled tothe memory cell MC1. Accordingly, it is possible to make the load of thefirst input node and the load of the second input node almost equal, inthe sense amplifier SA. Therefore, it is possible to make an exactcomparison of the cell current Ic and the reference current Iref (thatis, exact detection of the data of the memory cell MC1).

The sense amplifier SA amplifies the difference of the cell current Icand the reference current Iref. The output signal of the sense amplifierSA is transferred to the output buffer OBUF via the read-system main bitline RMBL0.

In the reference current reading system, the control signal linesYRB_U1CN and YRB_D1CN are always maintained in an inactive state (Hlevel). That is, the PMOS transistor switches 55U and 55D are always inan OFF state.

(On the Path of a Memory Cell Current in the Complementary ReadingSystem)

FIG. 8 is a drawing illustrating the path of a memory cell current inthe complementary reading system in the circuit configuration of FIG. 7.When reading the data of the memory cells MC1 and MC2 configuring a twincell, the path of a cell current Ic1 flowing through the memory cell MC1and the path of a cell current Ic2 flowing through the memory cell MC2are illustrated in FIG. 8.

When reading the data of the memory cells MC1 and MC2, the word line WLmcoupled common to the memory cells MC1 and MC2 is activated. In thisstate, the control signal lines YRA_D0N, YRB_D0N, and YRB_D1CN areactivated to generate the cell currents Ic1 and Ic2. The cell currentIc1 flows in the direction from the sense amplifier SA to the sourceline SL, via the output signal line CBLD, the PMOS transistor switches51D and 53D0, the sub bit line SBL_D0, and the memory cell MC1 in thisorder. The cell current Ic2 flows in the direction from the senseamplifier SA to the source line SL, via the output signal line CBLU, thePMOS transistor switches 55D and 54D0, the sub bit line SBL_D4, and thememory cell MC2 in this order. At the time of data read, the source lineSL is coupled to the ground node VSS.

The sense amplifier SA amplifies the difference of the cell current Ic1and the cell current Ic2. The output signal of the sense amplifier SA istransferred to the output buffer OBUF via the read-system main bit lineRMBL0.

In the complementary reading system, the control signal lines REF_U andREF_D are always deactivated to an L level, and the control signal linesYRB_U1N and YRB_D1N are always deactivated to an H level. That is, theNMOS transistors 56U, 56D, 57U, and 57D and the PMOS transistors 52U and52D are always in an OFF state.

(On a Driver Circuit of the Control Signal Line of the Hierarchy SenseAmplifier Band)

FIGS. 9A and 9B are drawings illustrating the configuration of a drivercircuit for driving each control signal line in the hierarchy senseamplifier band illustrated in FIG. 7. FIG. 9A illustrates theconfiguration of a driver circuit for control signal lines related tothe read and write of the upside memory array 22 illustrated in FIG. 6,and FIG. 9B illustrates the configuration of a driver circuit forcontrol signal lines related to the read and write of the downsidememory array 24 illustrated in FIG. 6.

Among the input signals of FIG. 9A and FIG. 9B, a control signal CMPLONis a signal for distinguishing between the complementary reading systemand the reference current reading system to be applied to the memorycell as a read target and a write target. The control signal CMPLON issupplied from the flash sequencer (FSQC) 7 illustrated in FIG. 1. In thecomplementary reading system, the control signal CMPLON is set at an Hlevel (“1”), and in the reference current reading system, the controlsignal CMPLON is set at an L level (“0”).

Other input signals are generated by the column decoder (CDEC) 32, basedon a control signal from the flash sequencer (FSQC) 7, a control signalfrom the timing generator 36 illustrated in FIG. 6, and an addresssupplied to the input/output buffer (IOBUF) 33. In particular, controlsignals YRA_U0_in-YRA_U3_in and YRA_D0_in-YRA_D3_in are the columnselection signals based on the lower address, and control signalsYRB_U0_in-YRB_U3_in and YRB_D0_in-YRB_D3_in are the column selectionsignals based on the upper address.

With reference to FIG. 9A, signals supplied to control signal linesZL_U0, ZL_U1, DC_U0, and DC_U1 are generated by the buffers 101, 102,105, and 106, respectively by amplifying control signals ZL_U0_in,ZL_U1_in, DC_U0_in, and DC_U1_in. Similarly, with reference to FIG. 9(B), signals supplied to control signal lines ZL_D0, ZL_D1, DC_D0, andDC_D1 are generated by the buffers 127, 128, 125, and 126, respectivelyby amplifying control signals ZL_D0_in, ZL_D1_in, DC_D0_in, andDC_D1_in.

With reference to FIG. 9A, signals supplied to control signal linesCH_U0N, CH_U1N, YRA_U0N-YRA_U3N, and YRB_U0N are generated by theinverters 103, 104, 107-110, and 112, respectively by inverting andamplifying control signals CH_U0_in, CH_U1_in, YRA_U0_in-YRA_U3_in, andYRB_U0_in. Similarly, with reference to FIG. 9 (B), signals supplied tocontrol signal lines CH_D0N, CH_D1N, YRA_D0N-YRA_D3N, and YRB_D0N aregenerated by the inverters 123, 124, 119-122, and 115, respectively byinverting and amplifying control signals CH_D0_in, CH_D1_in,YRA_D0_in-YRA_D3_in, and YRB_D0_in.

With reference to FIG. 9A, signals supplied to control signal linesREF_U, YRB_U1N, and YRB_U1CN are generated by the logic gates 111, 113,and 114, respectively. Specifically, when the CMPLON=“0” (the referencecurrent reading system), the logic gate 111 outputs a signal obtained byamplifying a control signal REF_U_in, to a control signal line REF_U.When the CMPLON=“1” (the complementary reading system), the logic gate111 outputs a signal of an L level (“0”) irrespective of the controlsignal REF_U_in, to deactivate the control signal line REF_U.

When the CMPLON=“0” (the reference current reading system), the logicgate 113 outputs a signal obtained by inverting and amplifying a controlsignal YRB_U1_in to the control signal line YRB_U 1N. When theCMPLON=“1” (the complementary reading system), the logic gate 113outputs a signal of an H level (“1”) irrespective of the control signalYRB_U1_in, to deactivate the control signal line YRB_U 1N.

When the CMPLON=“0” (the reference current reading system), the logicgate 114 outputs a signal of an H level (“1”) irrespective of thecontrol signal YRB_U1_in, to deactivate the control signal lineYRB_U1CN. When the CMPLON=“1” (the complementary reading system), thelogic gate 114 outputs a signal obtained by inverting and amplifying thecontrol signal YRB_U0_in to the control signal line YRB_U1CN.

Similarly, with reference to FIG. 9 (B), signals supplied to controlsignal lines REF_D, YRB_D1N, and YRB_D1CN are generated by the logicgates 118, 116, and 117, respectively. Specifically, when the CMPLON=“0”(the reference current reading system), the logic gate 118 outputs asignal obtained by amplifying a control signal REF_D in, to a controlsignal line REF_D. When the CMPLON=“1” (the complementary readingsystem), the logic gate 118 outputs a signal of an L level (“0”)irrespective of the control signal REF_D in, to deactivate the controlsignal line REF_D.

When the CMPLON=“0” (the reference current reading system), the logicgate 116 outputs a signal obtained by inverting and amplifying a controlsignal YRB_D1_in, to the control signal line YRB_D1N. When theCMPLON=“1” (the complementary reading system), the logic gate 116outputs a signal of an H level (“1”) irrespective of the control signalYRB_D1_in, to deactivate the control signal line YRB_D1N.

When the CMPLON=“0” (the reference current reading system), the logicgate 117 outputs a signal of an H level (“1”) irrespective of thecontrol signal YRB_D1_in, to deactivate the control signal lineYRB_D1CN. When the CMPLON=“1” (the complementary reading system), thelogic gate 117 outputs a signal obtained by inverting and amplifying thecontrol signal YRB_D0_in, to the control signal line YRB_D1CN.

(An Example of a Generating Circuit of the Control Signal CMPLON)

FIG. 10 is a drawing illustrating an example of a generating circuit ofthe control signal CMPLON illustrated in FIG. 9. The circuit illustratedin FIG. 10 is provided in the flash sequencer (FSQC) 7 illustrated inFIG. 6. This generating circuit includes plural registers 130 and acomparator 131.

The registers 130 are for storing in advance the address information ofan region to be used by the complementary reading system among thememory arrays which configure the memory mat 20 illustrated in FIG. 6.The comparator 131 compares the externally-supplied address informationADDR with the address information stored in the registers 130, and whenboth are in agreement, the comparator 131 asserts the control signalCMPLON. By use of the circuit illustrated in FIG. 10, it is possible todetermine whether the region to be accessed is used in the referencecurrent reading system or the complementary reading system. By providingplural pieces of the circuit concerned, it is possible to determine forplural regions whether each of the regions is used in the referencecurrent reading system or the complementary reading system.

When it is necessary to change the read timing, in the reference currentreading system and the complementary reading system, the read timingsignal generated by the timing generator 36 illustrated in FIG. 6 ischanged based on the CMPLON signal, thereby attaining a stable read.

(An Example of the Configuration of the Sense Amplifier)

FIG. 11 is a circuit diagram illustrating an example of theconfiguration of the sense amplifier illustrated in FIG. 7 and FIG. 8.With reference to FIG. 11, the sense amplifier SA includes PMOStransistors 140-144, NMOS transistors 145-147, a selector 148, and athree-state buffer 149.

The PMOS transistor 142 is coupled between the first output signal lineCBLU and the second output signal line CBLD explained in FIG. 6. ThePMOS transistors 140 and 141 are coupled between the first output signalline CBLU and the second output signal line CBLD, in series mutually andin parallel with the PMOS transistor 142. The coupling node of the PMOStransistors 140 and 141 is coupled to the power supply node VDD. Aprecharge signal PC is supplied to the gates of the PMOS transistors140, 141, and 142.

As for the PMOS transistor 143, the source is coupled to the powersupply node VDD, the drain is coupled to the output signal line CBLD,and the gate is coupled to the output signal line CBLU. As for the PMOStransistor 144, the source is coupled to the power supply node VDD, thedrain is coupled to the output signal line CBLU, and the gate is coupledto the output signal line CBLD.

As for the NMOS transistor 145, the source is coupled to a node 135, thedrain is coupled to the output signal line CBLD, and the gate is coupledto the output signal line CBLU. As for the NMOS transistor 146, thesource is coupled to the node 135, the drain is coupled to the outputsignal line CBLU, and the gate is coupled to the output signal lineCBLD. As for the NMOS transistor 147, the drain is coupled to the node135 and the source is coupled to the ground node VSS. A sense enablesignal SEN is supplied to the gate of the NMOS transistor 147.

A latch circuit 136 combining two inverters is configured with the PMOStransistors 143 and 144 and the NMOS transistors 145 and 146. When thesense enable signal SEN is set as an H level (“1”), the latch circuit136 operates and the potential difference between the output signallines CBLU and CBLD is amplified.

According to the selection signal SELU outputted by the flash sequencer(FSQC) 7, the selector 148 outputs the potential of the upside outputsignal line CBLU when the selection signal SELU is “0”, and outputs thepotential of the downside output signal line CBLD when the selectionsignal SELU is “1.”

The three-state buffer 149 outputs a signal obtained by amplifying theoutput signal of the selector 148 to the read-system main bit line RMBL,when the sense enable signal SEN is at an H level (“1”). The output nodeof the three-state buffer 149 becomes high impedance when the senseenable signal SEN is at an L level (“1”).

The details of the operation of the sense amplifier SA which has theconfiguration described above will be described later with reference toFIG. 14 and FIG. 15. In the following, only the outline of the operationof the sense amplifier SA is described. First, the precharge signal PCis set to an active state (L level) in advance, and in the state wherethe output signal lines CBLU and CBLD are precharged to the power supplypotential, the memory cell or the reference current source as a readtarget is electrically coupled to each output signal line. Next, whenthe precharge signal PC is set to an H level, the cell current ofdifferent magnitude flows depending on the data stored in the memorycell as the read target; accordingly, a difference occurs between thepotential of the upside output signal line CBLU and the potential of thedownside output signal line CBLD. Next, when the sense enable signal SENis set to an H level, the operation of the latch circuit 136 is started.As a result, the potential difference between the output signal linesCBLU and CBLD is amplified. The potential of the output signal lineselected by the selector 148 is outputted to the read-system main bitline RMBL via the three-state buffer 149.

(An Example of the Configuration of the Output Buffer)

FIG. 12 is a circuit diagram illustrating an example of theconfiguration of the output buffer illustrated in FIG. 6. FIG. 12illustrates typically two read-system main bit lines RMBL0 and RMBL1.

With reference to FIG. 12, the output buffer (OBUF) 34 includes PMOStransistors 150_0, 150_1, . . . , respectively corresponding to theread-system main bit lines RMBL0, RMBL1, . . . , and buffers 151_0,151_1, . . . , respectively corresponding to the read-system main bitlines RMBL0, RMBL1, . . . .

The PMOS transistor 150 is coupled between the power supply node VDD andthe corresponding read-system main bit line RMBL. A control signalSEN_OR is supplied in common to the gate of each PMOS transistor 150.When the control signal SEN_OR is at an L level, each PMOS transistor150 is in an ON state. Therefore, the read-system main bit line ischarged to the power supply potential. When the control signal SEN_OR isset at an H level, the potential of each read-system main bit line RMBLbecomes equal to the output signal potential of the corresponding senseamplifier SA illustrated in FIG. 11. The buffer 151 amplifies the signalpotential outputted to the corresponding read-system main bit line RMBLfrom each sense amplifier SA and outputs it to the corresponding databus (HBUS-D0, HBUS-D1, . . . ) of the high speed bus (HBUS).

FIG. 13 is a drawing illustrating an example of a circuit for generatingthe control signal SEN_OR illustrated in FIG. 12. The circuitillustrated in FIG. 13 is provided in the flash sequencer (FSQC) 7illustrated in FIG. 6. Specifically, the circuit illustrated in FIG. 13includes OR gates 290 and 291 and a delay circuit 292.

The OR gate 290 is supplied with sense enable signals SEN0_SENn whichare inputted to the sense amplifiers SA provided respectivelycorresponding to the read-system main bit lines RMBL0-RMBLn. The OR gate290 outputs the logical addition of these sense enable signalsSEN0-SENn.

The delay circuit 292 is formed with the cascade connection of pluralbuffers. The OR gate 291 outputs the logical addition of the outputsignal of the OR gate 290 and the signal obtained by delaying thisoutput signal by the delay circuit 292, as the control signal SEN_OR.

(Read Operation in the Reference Current Reading System)

FIG. 14 is a timing chart illustrating an example of read operation inthe reference current reading system. With reference mainly to FIG. 6,FIG. 7, and FIG. 14, the following explains the procedure of the dataread of the memory cell MC1 provided in the memory array 24, in thereference current reading system. In the following explanation, it isassumed that data “0” (a state of a high threshold voltage) is writtenin the memory cell MC1.

First, at time t1 of FIG. 14, the address information is switched. Attime t2, the flash sequencer (FSQC) 7 illustrated in FIG. 1 outputs anaddress fetch signal. Responding to this signal, the input/output buffer(IOBUF) 33 fetches the address information. The fetched addressinformation is decoded by the column decoder 32 and the row decoders 30and 31.

At time t3, the driver provided in the row decoders 30 and 31 activatesa control signal line necessary for the data read of the memory cell MC1based on the address signal. Specifically, it is as follows.

(i) The discharge signal supplied to the control signal lines DC_U0 andDC_D0 is switched to an inactive state (L level), and the control signallines DC_U1 and DC_D1 are maintained in an active state (H level). Onthe other hand, the charge signal supplied to the control signal linesCH_U0N and CH_D0N is switched to an active state (L level), and thecontrol signal lines CH_U1N and CH_D1N are maintained in an inactivestate (H level). Accordingly, at least the sub bit line SBL_D0 to whichthe memory cell MC1 as the read target is coupled, and the sub bit lineSBL_U0 of the same column of the upside memory array 22 are prechargedto the power supply potential, and the adjoining sub bit lines SBL_D1and SBL_U1 are maintained to the ground potential. Accordingly, it ispossible to make the adjacent sub bit line SBL serve as a ground shield,and to prevent malfunction due to undesirable capacity coupling.

(ii) The control signal lines YRA_U0N, YRA_D0N, YRB_U0N, and YRB_D0N areswitched to an active state (L level). Accordingly, the sub bit linesSBL_D0 and SBL_U0 of the column corresponding to the memory cell MC1 areelectrically coupled to the output signal lines CBLD and CBLU,respectively. The control signal lines YRB_U1CN and YRB_D1CN which areemployed in the complementary reading system are maintained in aninactive state (H level).

(iii) By setting the control signal line REF_U to an active state (Hlevel), the current source CS1 is electrically coupled to the upsideoutput signal line CBLU.

(iv) The word line WLm coupled to the memory cell MC1 as the read targetis switched to an active state (H level).

(v) When reading the data of the memory cell MC1 provided in thedownside memory array, the selection signal SELU supplied to theselector 148 of the sense amplifier SA (refer to FIG. 11) is set at an Llevel (“0”).

At the next time t4, the precharge signal PC supplied to the senseamplifier SA from the flash sequencer (FSQC) 7 is changed to an inactivestate (H level), and the charge signal supplied to the control signallines CH_U0N and CH_D0N from the driver of the row decoders 30 and 31 ischanged to an inactive state (H level). As a result, the cell current Icflows in the direction from the downside output signal line CBLD to thememory cell MC1 and the reference current Iref flows in the directionfrom the upside output signal line CBLU to the current source CS1. Sincedata “0” (a state of a high threshold voltage) is written in the memorycell MC1, the cell current Ic is smaller than the reference currentIref. Accordingly, the potential of the upside output signal line CBLUbecomes lower than the potential of the downside output signal lineCBLD.

At the next time t5, the flash sequencer (FSQC) 7 changes the senseenable signal SEN to be outputted to the sense amplifier SA to an activestate (H level). Accordingly, the NMOS transistor 147 illustrated inFIG. 11 is set to ON, and the latch circuit 136 begins to operate. Thelatch circuit 136 amplifies the potential difference between the outputsignal lines CBLU and CBLD. As a result, the potential of the upsideoutput signal line CBLU falls to the ground potential (VSS), and thepotential of the downside output signal line CBLD rises to the powersupply potential (VDD). The potential of the upside output signal lineCBLU is outputted to the read-system main bit line RMBL via the selector148 and the three-state buffer 149.

Furthermore, at time t5, when the sense enable signal SEN is activated,the control signal SEN_OR to be outputted to the output buffer (OBUF) 34also changes to an active state (H level). Accordingly, the voltagesignal outputted to the read-system main bit line RMBL is transferred tothe output buffer (OBUF) 34 via the read-system main bit line RMBL fromthe sense amplifier SA and is outputted to the corresponding data bus ofthe high speed buses (HBUS) from the output buffer 34.

(Read Operation in the Complementary Reading System)

FIG. 15 is a timing chart illustrating an example of read operation inthe complementary reading system. With reference mainly to FIG. 6, FIG.8, and FIG. 15, the following explains the procedure to read the data ofthe twin cell configured with memory cells MC1 and MC2 provided in thememory array 24, in the complementary reading system. In the followingexplanation, it is assumed that data “0” (a state of a high thresholdvoltage) is written in the memory cell MC1, and data “1” (a state of alow threshold voltage) is written in the memory cell MC2.

As is the case with FIG. 14, first at time t1 of FIG. 15, the readaddress is switched, and at time t2, an address fetch signal isoutputted from the flash sequencer (FSQC) 7.

At time t3, the driver provided in the row decoders 30 and 31 activatesa control signal line necessary for the data read of the memory cellsMC1 and MC2 based on the address signal. Specifically, it is as follows.

(i) The discharge signal supplied to the control signal lines DC_U0 andDC_D0 is switched to an inactive state (L level), and the control signallines DC_U1 and DC_D1 are maintained in an active state (H level). Onthe other hand, the charge signal supplied to the control signal linesCH_U0N and CH_D0N is switched to an active state (L level), and thecontrol signal lines CH_U1N and CH_D1N are maintained in an inactivestate (H level). Accordingly, at least the sub bit lines SBL_D0 andSBL_D4 to which the memory cells MC1 and MC2 as the read target arecoupled, and the sub bit lines SBL_U0 and SBL_U4 of the same column ofthe upside memory array 22 are precharged to the power supply potential,and the adjoining sub bit lines SBL_D1, SBL_U1, SBL_D3, SBL_U3, SBL_D5,and SBL_U5 are maintained at the ground potential.

(ii) The control signal lines YRA_D0N, YRB_D0N, and YRB_D1CN areswitched to an active state (L level). Accordingly, the sub bit linesSBL_D0 and SBL_D4 which are coupled to the memory cells MC1 and MC2respectively, are electrically coupled to the output signal lines CBLDand CBLU, respectively.

(iii) The control signal lines REF_U and REF_D are maintained in aninactive state (L level). Therefore, the current sources CS1 and CS2 arenot electrically coupled to the output signal lines CBLU and CBLD.

(iv) The word line WLm coupled common to the memory cells MC1 and MC2 asthe read target is switched to an active state (H level).

(v) When the data of the memory cell MC1 provided in the downside memoryarray is read, the selection signal SELU supplied to the selector 148 ofthe sense amplifier SA (refer to FIG. 11) is set at an L level (“0”).

At the next time t4, the precharge signal PC supplied to the senseamplifier SA by the flash sequencer (FSQC) 7 changes to an inactivestate (H level), and the charge signal supplied to the control signallines CH_U0N and CH_D0N by the driver of the row decoders 30 and 31changes to an inactive state (H level). As a result, the cell currentIc1 flows in the direction from the downside output signal line CBLD tothe memory cell MC1 and the cell current Ic2 flows in the direction fromthe upside output signal line CBLU to the memory cell MC2. Data “0” (astate of a high threshold voltage) is written in the memory cell MC1,and data “1” (a state of a low threshold voltage) is written in thememory cell MC2. Therefore, the cell current Ic1 is smaller than thecell current Ic2. Accordingly, the potential of the upside output signalline CBLU becomes lower than the potential of the downside output signalline CBLD.

At the next time t5, the flash sequencer (FSQC) 7 changes the senseenable signal to be outputted to the sense amplifier SA to an activestate (H level). The subsequent operations are the same as those of thecase of the reference current reading system, therefore, the repeatedexplanation thereof is omitted.

(Details of the Write-System Circuit)

FIG. 16 is a circuit diagram illustrating the details of a write-systempath illustrated in FIG. 6. FIG. 16 illustrates typically fourwrite-system main bit lines WMBL0-WMBL3.

With reference to FIG. 16, the main-bit-line voltage control circuit 39includes program latch circuits PRGL0-PRGL3 provided respectivelycorresponding to the write-system main bit lines WMBL0-WMBL3, and awrite-system discharge circuit 40. In the case of data write, accordingto the data (“1” or “0”) held at the program latch circuit PRGL, a writecurrent flows through the write-system main bit line WMBL selectively.As described in FIG. 17, each program latch circuit PRGL operatesaccording to control signals /PRE, WPLS, /RSH, RSW, and RSL, which aresupplied from the flash sequencer (FSQC) 7.

The write-system discharge circuit 40 is a circuit which couples thewrite-system main bit line WMBL to the ground node VSS selectivelyaccording to discharge signals DCW0 and DCW1. The write-system dischargecircuit 40 includes NMOS transistors 83_0-83_3 provided respectivelycorresponding to the write-system main bit lines WMBL0-WMBL3. Each NMOStransistor is coupled between the corresponding write-system main bitline WMBL and the ground node VSS. The discharge signal DCW0 is suppliedto the gates of the even-numbered NMOS transistors 83_0 and 83_2, andthe discharge signal DCW1 is supplied to the gates of the odd-numberedNMOS transistors 83_1 and 83_3.

By use of the write-system discharge circuit 40, it is possible to setat the ground potential a write-system main bit line WMBL which adjoinsa write-system main bit line WMBL selected in the verifying operationafter the data write. Accordingly, it is possible to make thewrite-system main bit line WMBL which adjoins the selected write-systemmain bit line WMBL serve as a ground shield, and to prevent malfunctiondue to undesirable capacity coupling.

The rewriting column selector 38 is a circuit for selecting the programlatch PRGL to which the write data is inputted based on the writeaddress, and for selecting the write-system main bit line WMBL coupledto the verification circuit 37. The rewriting column selector 38includes input signal lines 81 and 82, NMOS transistor switches80B0-80B3 and 80L0-80L3 for column selection, and control signal linesfor supplying selection signals YM0-YM3 to the gate of the correspondingNMOS transistor switch, respectively.

The NMOS transistor switches 80B0-80B3 are inserted in the write-systemmain bit lines WMBL0-WMBL3, respectively. The NMOS transistor switches80L0 and 80L1 correspond to the program latch circuits PRGL0 and PRGL1,respectively, and are coupled between the input signal line 81 and thecorresponding program latch circuit. The NMOS transistor switches 80L2and 80L3 correspond to the program latch circuits PRGL2 and PRGL3,respectively, and are coupled between the input signal line 82 and thecorresponding program latch circuit. In order to make possible thesimultaneous write of the complementary data which configures a twincell, two input signal lines 81 and 82 are provided. The input signalline 81 corresponds to a positive cell, and the input signal line 82corresponds to a negative cell.

The gates of the NMOS transistor switches 80Bi and 80Li corresponding tothe common write-system main bit line WMBLi (i=0-4) are coupled to thecommon control signal line. The selection signal (YM0-YM4) supplied toeach control signal line is supplied from the column decoder 32 asdescribed later.

The column decoder (CDEC) 32 includes selectors 88-90 and three-statebuffers 91 and 92 as apart of the configuration.

When a data transfer enable signal ENDT supplied from the flashsequencer (FSQC) 7 is in an active state (H level), the three-statebuffer 91 amplifies the write data signal received via the data busPBUS-D of the peripheral bus (PBUS) 13, and outputs it to the inputsignal line 81.

When the control signal CMPLON is at an H level (“1”) (that is, in thecomplementary reading system), the selector 88 outputs a signal obtainedby inverting the write data signal received via the data bus PBUS-D ofthe peripheral bus (PBUS) 13. When the control signal CMPLON is at an Llevel (“0”) (that is, in the reference current reading system), theselector 88 outputs a signal obtained by amplifying the write datasignal received via the data bus PBUS-D of the peripheral bus (PBUS) 13.

When the data transfer enable signal ENDT is in an active state (Hlevel), the three-state buffer 92 supplies a signal obtained byamplifying the output signal of the selector 88, to the input signalline 82. Accordingly, when the control signal CMPLON is at an H level(“1”) (that is, in the complementary reading system), the complementarywrite data is supplied to the input signal lines 81 and 82. The writedata supplied to the input signal line 81 is held in the program latchcircuit PRGL0 or PRGL1, and is written in a positive cell via thewrite-system main bit line SMBL0 or SMBL1. The write data supplied tothe input signal line 82 is held in the program latch circuit PRGL2 orPRGL3, and is written in a negative cell via the write-system main bitline SMBL2 or SMBL3.

The selector 89 is supplied with selection signals YW0 and YW2. When thecontrol signal CMPLON is at an H level (“1”) (that is, in thecomplementary reading system), the selector 89 supplies the selectionsignal YW0 to the NMOS transistor switches 80B2 and 80L2. Accordingly,in the complementary reading system, both of the write-system main bitline WMBL0 and the program latch circuit PRGL0 which correspond to apositive cell, and the write-system main bit line WMBL2 and the programlatch circuit PRGL2 which correspond to a negative cell become in aselected state. On the other hand, when the control signal CMPLON is atan L level (“0”) (that is, in the reference current reading system), theselector 89 supplies the selection signal YW2 to the NMOS transistorswitches 80B2 and 80L2.

The selector 90 is supplied with selection signals YW1 and YW3. When thecontrol signal CMPLON is at an H level (“1”) (that is, in thecomplementary reading system), the selector 90 supplies the selectionsignal YW1 to the NMOS transistor switches 80B3 and 80L3. Accordingly,in the complementary reading system, both of the write-system main bitline WMBL1 and the program latch circuit PRGL1 which correspond to apositive cell, and the write-system main bit line WMBL3 and the programlatch circuit PRGL3 which correspond to a negative cell become in aselected state. On the other hand, when the control signal CMPLON is atan L level (“0”) (that is, in the reference current reading system), theselector 90 supplies the selection signal YW3 to the NMOS transistorswitches 80B3 and 80L3.

The selection signals YW0-YW3 are generated by the column decoder (CDEC)32, on the basis of the control signal from the flash sequencer (FSQC) 7illustrated in FIG. 1, the control signal from the timing generator 36illustrated in FIG. 6, and the address inputted to the input/outputbuffer (IOBUF) 33.

The verification circuit 37 includes a verification sense amplifier VSA,a buffer 84, an exclusive OR gate 85, a selector 86, and an AND gate 87.

An input node of the verification sense amplifier VSA is coupled to thewrite-system main bit lines WMBL0-WMBL3, via the NMOS transistorswitches 80B0-80B3, respectively. The verification sense amplifier VSAreads the data written in a memory cell as a write target via thewrite-system main bit line WMBL corresponding to the memory cell, andinverts and amplifies the signal.

An output signal VSAOUT0 of the verification sense amplifier VSA issupplied to the selector 86. Output signals VSAOUT1, . . . , of otherverification sense amplifiers VSA are also supplied to the selector 86.The selector 86 outputs a signal selected from the output signalsVSAOUT0, VSAOUT1, . . . , of the verification sense amplifiers VSA, tothe data bus PBUS-D of the peripheral bus PBUS.

The output signal VSAOUT0 of the verification sense amplifier VSA issupplied also to one input node of the exclusive OR gate 85. The otherinput node of the exclusive OR gate 85 is supplied with the write dataheld in the program latch circuit PRGL after being coupled to the inputsignal lines 81 and 82 via the buffer 84. Accordingly, the exclusive ORgate 85 outputs a signal at an H level (“1”) (a determination resultVRSLT0), when the data of the memory cell as the write target and thewrite data held in the program latch circuit PRGL are in agreement.

The AND gate 87 is supplied with the determination results VRSLT0,VRSLT1, . . . , by the plural verification circuits 37. The AND gate 87outputs a signal at an H level (“1”) as a determination result VRSLT,when all of these determination results are “1.”

(Details of the Program Latch Circuit)

FIG. 17 is a circuit diagram illustrating the details of each programlatch circuit illustrated in FIG. 16. With reference to FIG. 17, theprogram latch circuit PRGL includes PMOS transistors 160-163, NMOStransistors 164-167, inverters 168-172, and a transmission gate 173.

The inverters 169 and 170 configure an inverter latch circuit and holdcomplementary data at holding nodes 174 and 175. The holding node 174 iscoupled to the power supply node VDD via the PMOS transistor 160, and iscoupled to the ground node VSS via the NMOS transistor 164. The gate ofthe PMOS transistor 160 is supplied with the control signal /RSH forsetting the data held at the holding node 174 at an H level. The gate ofthe NMOS transistor 164 is supplied with the control signal RSL forsetting the data held at the holding node 174 at an L level.

The holding node 174 is further coupled to a data input path 158 via thetransmission gate 173. The data input path 158 is coupled to the inputsignal line 81 or 82 via one of the NMOS transistor switches 80L0-80L3illustrated in FIG. 16. The control signal RSW for switching theacceptance/rejection of the input of the write data is supplied to thegate of a PMOS transistor which configures the transmission gate 173 viathe inverter 168, and also supplied to the gate of an NMOS transistorwhich configures the transmission gate 173.

The PMOS transistors 161 and 162 are coupled in parallel between thepower supply node VDD and the node 176. The gate of the PMOS transistor161 is supplied with a program enable signal /PRE via the inverter 171.The gate of the PMOS transistor 162 is coupled to the holding node 175.

The PMOS transistor 163 and the NMOS transistors 165-167 are coupled inseries in this order between the node 176 and the ground node VSS. Thegate of the PMOS transistor 163 is supplied with a write pulse WPLS viathe inverter 172. The gate of the NMOS transistor 165 is coupled to theholding node 175. The gate of the NMOS transistor 166 is supplied withthe write pulse WPLS. The gate of the NMOS transistor 167 is suppliedwith a reference voltage VREF. A coupling node 177 of the NMOStransistors 163 and 165 is coupled to the corresponding write-systemmain bit line WMBL.

Accordingly, when the program enable signal /PRE is in an active state(L level), the write pulse WPLS is in an active state (H level), and thedata currently held at the holding node 174 is L level (“0”), then theNMOS transistors 165-167 become in an ON state. Accordingly, a writecurrent flows from the source line SL coupled to the memory cell of thewrite target to the ground node VSS, via the corresponding sub bit lineSBL, the corresponding write-system main bit line WMBL, and the MOStransistors 165-167. At the time of data write, the source line SL iscoupled to the power supply node which supplies a high voltage (forexample, 6V).

(Write Operation of the Reference Current Reading System)

Hereinafter, with reference mainly to FIG. 16 and FIG. 17, andsummarizing the explanation made so far, the write control in thereference current reading system is explained.

In the reference current reading system, data to be written in eachmemory cell is independent data. When data write is performed to theregion where the data in the reference current reading system is stored,the write target address supplied from the exterior is different fromthe address indicating the complementary read region stored in theregister 130 explained with reference to FIG. 10. Accordingly, thecontrol signal CMPLON is in an inactive state (“0”). In this case, thedata supplied from the data bus PBUS-D of the peripheral bus PBUS isstored directly to a program latch selected by the selection signalsYW0-YW3 among the program latches PRGL0-PRGL3.

Data write to the memory cell as a write target is performed based onthe data stored in the program latch PRGL. For example, when writing thedata “0” (corresponding to the state of a high threshold voltage) in thememory cell MC2 illustrated in FIG. 7, the data “0” (L level) is storedin the holding node 174 of the program latch PRGL2. In this state, inFIG. 7, the control signal line ZL_D0 becomes in an active state (Hlevel), the word line WLm is set at 1.5V, the memory gate line MGLm isset at 10V, and the source line SLm is set at 6V. Furthermore, theprogram enable signal /PRE is set in an active state (L level) and thewrite pulse WPLS is set in an active state (H level). As a result, thewrite current flows from the source line SLm to the ground node VSS, viathe sub bit line SBL_D4, the write-system main bit line WMBL2, and theNMOS transistors 165-167 of the program latch PRGL2, in this order.

(Write Operation of the Complementary Reading System)

Hereinafter, with reference mainly to FIG. 16 and FIG. 17, andsummarizing the explanation made so far, the write control in thecomplementary reading system is explained.

In the complementary reading system, it is necessary to writecomplementary data (data inverted mutually) in a pair of memory cellswhich configures a twin cell. When data write is performed to the regionwhere the data in the complementary reading system is stored, the writetarget address supplied from the exterior agrees with the addressindicating the complementary read region stored in the register 130explained with reference to FIG. 10. Accordingly, the control signalCMPLON is in an active state (“1”). In this case, according to theselection signal YW0 or YW1, data supplied from the data bus PBUS-D ofthe peripheral bus PBUS is stored directly to a program latch PRGL whichcan be coupled to a positive cell configuring a twin cell. Data obtainedby inverting the data supplied from the data bus PBUS-D of theperipheral bus PBUS is stored to a program latch PRGL which can becoupled to a negative cell configuring the twin cell.

The data write to the twin cell as a write target is performed based onthe data stored in these two program latches PRGLs. For example, whendata “0” (corresponding to the state of a high threshold voltage) iswritten in the memory cell MC1 and data “1” is written in the memorycell MC2 which are illustrated in FIG. 8, data “0” (L level) is storedat the holding node 174 of the program latch PRGL0, and data “1” (Hlevel) is stored at the holding node 174 of the program latch PRGL2. Inthis state, in FIG. 7, the control signal line ZL_D0 becomes in anactive state (H level), the word line WLm is set at 1.5V, the memorygate line MGLm is set at 10V, and the source line SLm is set at 6V.Furthermore, the program enable signal /PRE is set in an active state (Llevel), and the write pulse WPLS is set in an active state (H level). Asa result, the write current flows from the source line SLm to the groundnode VSS, via the sub bit line SBL_D0, the write-system main bit lineWMBL0, and the NMOS transistors 165-167 of the program latch PRGL0, inthis order. In the program latch PRGL2 corresponding to the memory cellMC2, the PMOS transistor 162 is in an ON state and the NMOS transistor165 is in an OFF state. Therefore, the potential of the write-systemmain bit line WMBL2 becomes equal to the power supply potential,accordingly, no write current flows.

(Erase Operation)

When performing collective erasure of plural memory cells, thecorresponding sub bit line SBL is set at a high impedance, thecorresponding word line is set at 0V, the corresponding memory gate lineis set at −10V, and the corresponding source line is set at 6V, asexplained in FIG. 2B. In order to set the sub bit line SBL at a highimpedance, the corresponding control signal lines YRA_U0N-YRA_U3N,YRA_D0N-YRA_D3N, CH_U0N-CH_U1N, and CH_D0N-CH_D1N are set in an inactivestate (H level), and the corresponding control signal lines ZL_U0-ZL_U1,ZL_D0-ZL_D1, DC_U0-DC_U1, and DC_D0-DC_D1 are set in an inactive state(L level). The above-described erase operation is the same for thereference current reading system and the complementary reading system.

(Effect)

As described above, according to Embodiment 1, it is possible to providethe semiconductor device including the nonvolatile memory in which thereference current reading system and the complementary reading systemcan be changed. Accordingly, it becomes possible to change the memorysize of the data area and the memory size of the code area.

<Embodiment 2>

When adopting the memory array structure in which the drain region ofeach memory cell is coupled to a sub bit line SBL via a contact hole andthe source region of each memory cell is coupled to the source line SLvia a contact hole, it is possible to provide a column of a uniquememory cell in which the source region of the memory cell is not coupledto the source line (accordingly, not employed for data storage). InEmbodiment 2, a sub bit line SBL coupled to this unique memory cellcolumn is employed only for the wiring capacitance to be added to thesignal output line in the reference current reading system. As describedlater, according to the present configuration, the MOS transistorswitches provided in the hierarchy sense amplifier band can be separatedinto switches for access to the upside memory array 22 and switches foraccess to the downside memory array 24. Therefore, it is possible toenhance the degree of freedom in design.

The semiconductor device according to Embodiment 2 differs from thesemiconductor device according to Embodiment 1 in that the unique memorycell column and the corresponding write-system main bit line and sub bitline are included in the memory mat as described above. Furthermore, thesemiconductor device according to Embodiment 2 differs from thesemiconductor device according to Embodiment 1 in that a MOS transistorswitch and a control signal line are further provided in the hierarchysense amplifier band, in order to switch the coupling between the subbit line corresponding to the unique column and the output signal linesCBLU and CBLD, and in order to switch the coupling between the sub bitline corresponding to the unique column and the power supply node andthe ground node. The other points of the semiconductor device accordingto Embodiment 2 are the same as the semiconductor device according toEmbodiment 1. For example, the configuration of the semiconductor deviceillustrated in FIG. 1 and the basic configuration of the memory cellmodule illustrated in FIG. 6 apply similarly to the case of Embodiment2. Accordingly, the explanation thereof is not repeated.

(Configuration of the Read-System Circuit)

FIG. 18 is a drawing illustrating the detailed configuration of ahierarchy sense amplifier band according to Embodiment 2.

As is the case with Embodiment 1 illustrated in FIG. 7, FIG. 18illustrates typically four write-system main bit lines WMBL0-WMBL3,eight sub bit lines SBL_U0-SBL_U7 corresponding to the upside memoryarray 22, eight sub bit lines SBL_D0-SBL_D7 corresponding to thedownside memory array 24, and one read-system main bit line RMBL0.

In the case of FIG. 18, one main bit line WMBLR, one sub bit line SBL_URcorresponding to the upside memory array 22, and one sub bit line SBL_DRcorresponding to the downside memory array 24 are added further. Asdescribed above, the source region of each memory cell MCR coupled tothe added sub bit lines SBL_UR and SBL_DR is not coupled to the sourceline SL. Although not shown in FIG. 18, the plural bit lines describedabove are repeatedly provided in the row direction in the actual memorycell module 6.

The following explains the difference between the hierarchy senseamplifier band illustrated in FIG. 18 and the hierarchy sense amplifierband illustrated in FIG. 7. First, the sub-bit-line selector 26D differsfrom the sub-bit-line selector 26D illustrated in FIG. 7 in that an NMOStransistor switch 60DR coupled between the main bit line WMBLR and thesub bit line SBL_DR and a control signal line ZL_DR coupled to the gateof the NMOS transistor 60DR are further included. Also the upsidesub-bit-line selector 26U differs from the case of FIG. 7 in the similarrespects.

The charging and discharging circuit 27D differs from the charging anddischarging circuit 27D illustrated in FIG. 7 in that a PMOS transistorswitch 58DR coupled between the sub bit line SBL_DR and the power supplynode VDD and an NMOS transistor switch 59DR coupled between the sub bitline SBL_DR and the ground node VSS are further included. The chargingand discharging circuit 27D differs from the charging and dischargingcircuit 27D illustrated in FIG. 7 in that control signal lines CH_DRNand DC_DR coupled to the gates of MOS transistor switches 58DR and 59DR,respectively, are further included.

The read column selector 25 differs from the read column selector 25illustrated in FIG. 7 in that PMOS transistor switches 68D and 65D and,control signal lines YRB_DRN and YRA_DRN coupled to the gates of thePMOS transistor switches 68D and 65D, respectively are further included.The PMOS transistor switches 68D and 65D are coupled in series in thisorder between the upside output signal line CBLU and the sub bit lineSBL_DR provided in the downside memory array 24.

Similarly, the read column selector 25 differs from the read columnselector 25 illustrated in FIG. 7 in that PMOS transistor switches 68Uand 65U and control signal lines YRB_URN and YRA_URN coupled to thegates of the PMOS transistor switches 68U and 65U are further included.The PMOS transistor switches 68U and 65U are coupled in this orderbetween the downside output signal line CBLD and the sub bit line SBL_URprovided in the upside memory array 22.

The read column selector 25 differs from the read column selectorillustrated in FIG. 7 in that a current source CS and NMOS transistorswitches 66U and 66D are included, in lieu of the current sources CS1,CS2, and the NMOS transistor switches 56U, 56D, 57U, and 57D. The NMOStransistor switch 66U is coupled between the current source CS and thecoupling node 67U of the PMOS transistor switches 65U and 68U. The NMOStransistor switch 66D is coupled between the coupling node 67D of thePMOS transistor switches 65D and 68D, and the current source CS. Thegates of the NMOS transistor switches 66U and 66D are coupled to thecontrol signal line REF_U and REF_D, respectively.

(On the Path of a Memory Cell Current and a Reference Current in theReference Current Reading System)

With reference to FIG. 18, the following explains on the path of a cellcurrent Ic in reading the data of the memory cell MC1 and the path of areference current Iref in the reference current reading system.

When reading the data of the memory cell MC1, a word line WLm coupled tothe control gate of memory cell MC1 is activated to an H level.Furthermore, a cell current Ic is generated by activating the controlsignal lines YRA_D0N and YRB_D0N. The cell current Ic flows in thedirection from the sense amplifier SA to the source line SL, via theoutput signal line CBLD, the PMOS transistor switches 51D and 53D0, thesub bit line SBL_D0, and the memory cell MC1 in this order.

In order to generate the reference current Iref, the control signallines YRB_DRN and REF_D are activated. The reference current Iref flowsin the direction from the sense amplifier SA to the ground node VSS, viathe output signal line CBLU, the PMOS transistor switches 68D and 66D,and the current source CS in this order. The magnitude of the referencecurrent Iref is adjusted by the current source CS.

When generating the reference current Iref, the PMOS transistor switch65D is further set to ON by activating the control signal line YRA_DRN.Accordingly, the wiring capacitance of the sub bit line SBL_DR is addedto the output signal line CBLU on the side of the current source CS. Thewiring capacitance of the sub bit line SBL_DR has the almost same valueas the wiring capacitance of the sub bit line SBL_D0 coupled to thememory cell MC1. It is possible to make the load of the first input nodeand the load of the second input node almost equal, in the senseamplifier SA. Therefore, it is possible to make an exact comparison ofthe cell current Ic and the reference current Iref (that is, exactdetection of the data of the memory cell MC1).

The sense amplifier SA amplifies the difference of the cell current Icand the reference current Iref. The output signal of the sense amplifierSA is transferred to the output buffer OBUF via the read-system main bitline RMBL0.

(On the Path of a Memory Cell Current in the Complementary ReadingSystem)

FIG. 19 is a drawing illustrating a path of a memory cell current in thecomplementary reading system in the circuit configuration illustrated inFIG. 18. When reading the data of the memory cells MC1 and MC2configuring a twin cell, the path of a cell current Ic1 flowing throughthe memory cell MC1 and the path of a cell current Ic2 flowing throughthe memory cell MC2 are illustrated in FIG. 19. As illustrated in FIG.19, the path of the cell currents Ic1 and Ic2 is the same as the case ofFIG. 8, accordingly, the detailed explanation thereof is not repeated.

(On a Driver Circuit of the Control Signal Line of the Hierarchy SenseAmplifier Band)

FIGS. 20A and 20B are drawings illustrating the configuration of adriver circuit for driving each control signal line in the hierarchysense amplifier band illustrated in FIG. 18 and FIG. 19. FIG. 20Aillustrates the configuration of a driver circuit for control signallines related to the read and write of the upside memory array 22illustrated in FIG. 6, and FIG. 20B illustrates the driver circuit forcontrol signal lines related to the read and write of the downsidememory array 24 illustrated in FIG. 6.

As is the case with FIGS. 9A and 9B of Embodiment 1, the control signalCMPLON is supplied from the flash sequencer (FSQC) 7 illustrated inFIG. 1. Other input signals are generated by the column decoder (CDEC)32 based on a control signal from the flash sequencer (FSQC) 7, acontrol signal from the timing generator 36 illustrated in FIG. 6, andan address supplied to the input/output buffer (IOBUF) 33. As comparedwith FIGS. 9A and 9B, in FIGS. 20A and 20B, control signals ZL_UR_in,CH_UR_in, DC_UR_in, YRA_UR_in, YRA_DR_in, YRB_UR_in, YRB_DR_in,CH_DR_in, DC_DR_in, and ZL_DR_in are further supplied.

Signals supplied to the control signal lines ZL_UR and ZL_DR aregenerated by the logic gates 230 and 237, respectively. When the controlsignal CMPLON=“1” (the complementary reading system), the signalssupplied to the control signal lines ZL_UR and ZL_DR become at an Llevel (“0”). When the CMPLON=“0” (the reference current reading system),signals obtained by amplifying the control signals ZL_UR_in and ZL_DR_inare supplied respectively to the control signal lines ZL_UR and ZL_DR.

Signals supplied to the control signal lines CH_URN and CH_DRN aregenerated by the logic gates 231 and 235, respectively. When the controlsignal CMPLON=“1” (the complementary reading system), signals suppliedto the control signal lines CH_URN and CH_DRN become at an H level(“1”). When the CMPLON=“0” (the reference current reading system),signals obtained by inverting and amplifying the control signalsCH_UR_in and CH_DR_in are supplied respectively to the control signallines CH_URN and CH_DRN.

Signals supplied to the control signal lines DC_UR and DC_DR aregenerated by the logic gates 232 and 236, respectively. When the controlsignal CMPLON=“1” (the complementary reading system), signals suppliedto the control signal line DC_UR and DC_DR become at an L level (“0”).When the CMPLON=“0” (the reference current reading system), signalsobtained by amplifying the control signals DC_UR_in and DC_DR_in aresupplied respectively to the control signal lines DC_UR and DC_DR.

Signals supplied to the control signal lines YRA_URN and YRA_DRN aregenerated by the logic gates 233 and 234, respectively. When the controlsignal CMPLON=“1” (the complementary reading system), the signalssupplied to the control signal lines YRA_URN and YRA_DRN become at an Hlevel (“1”). When the CMPLON=“0” (the reference current reading system),signals obtained by inverting and amplifying the control signalsYRA_UR_in and YRA_DR_in are supplied respectively to the control signallines YRA_URN and YRA_DRN.

Signals supplied to the control signal lines YRB_URN and YRB_DRN aregenerated by the logic gates 238 and 239, respectively. When the controlsignal CMPLON=“1” (the complementary reading system), the signalsupplied to the control signal lines YRB_URN and YRB_DRN become at an Hlevel (“1”). When the CMPLON=“0” (the reference current reading system),signals obtained by inverting and amplifying the control signalsYRB_UR_in and YRB_DR_in are supplied respectively to the control signallines YRB_URN and YRB_DRN.

(Read Operation in the Reference Current Reading System)

FIG. 21 is a timing chart illustrating an example of read operation inthe reference current reading system according to Embodiment 2. Thetiming chart illustrated in FIG. 21 corresponds to the timing chartillustrated in FIG. 14 of Embodiment 1, and illustrates the operation ofthe data read of the memory cell MC1 provided in the memory array 24 inthe reference current reading system. It is assumed that data “0” (astate of a high threshold voltage) is written in the memory cell MC1.Hereinafter, with reference mainly to FIG. 18 and FIG. 21, what isdifferent from the timing chart illustrated in FIG. 14 of Embodiment 1is explained; however, what is common to FIG. 14 is not explainedrepeatedly.

As is the case with FIG. 14, at time t1 of FIG. 21, the read address isswitched, and at time t2, an address fetch signal is outputted from theflash sequencer (FSQC) 7.

At the next time t3, the driver provided in the row decoders 30 and 31activates a control signal line necessary for the data read of thememory cell MC1 based on the address signal. What is different from thecase of FIG. 14 is as follows.

(i) The discharge signal supplied to the control signal lines DC_UR andDC_DR is switched to an inactive state (L level), and the charge signalsupplied to the control signal lines CH_URN and CH_DRN is switched to anactive state (L level). Accordingly, the sub bit lines SBL_UR and SBL_DRwhich are added in Embodiment 2 are further precharged.

(ii) The control signal lines YRA_D0N, YRB_D0N, YRA_DRN, and YRB_DRN areswitched to an active state (L level). Accordingly, the sub bit lineSBL_D0 coupled to the memory cell MC1 is electrically coupled to thedownside output signal line CBLD, and the sub bit line SBL_DR added inEmbodiment 2 is electrically coupled to the upside output signal lineCBLU. Unlike the case of FIG. 14, it is not necessary to electricallycouple the sub bit line SBL_U0 to the upside output signal line CBLU.Therefore, the control signal lines YRA_U0N and YRB_U0N are maintainedin an inactive state (H level). The control signal line YRB_URN is alsomaintained in an inactive state (H level).

(iii) Contrary to the case of FIG. 14, by setting the control signalline REF_D to an active state (H level), the current source CS iselectrically coupled to the upside output signal line CBLU. The setup ofother control signal lines is the same as the case of FIG. 14.

At the next time t4, the precharge signal PC supplied to the senseamplifier SA by the flash sequencer (FSQC) 7 changes to an inactivestate (H level), and the charge signal supplied from the driver of therow decoders 30 and 31 to the control signal lines CH_U0N, CH_D0N,CH_URN, and CH_DRN changes to an inactive state (H level). As a result,the cell current Ic flows in the direction from the downside outputsignal line CBLD to the memory cell MC1, and the reference current Irefflows in the direction from the upside output signal line CBLU to thecurrent source CS. Since the subsequent read operation is the same asthe case of FIG. 14, the explanation thereof is not repeated.

(Read Operation in the Complementary Reading System)

FIG. 22 is a timing chart illustrating an example of read operation inthe complementary reading system according to Embodiment 2. The timingchart illustrated in FIG. 22 corresponds to the timing chart illustratedin FIG. 15 of Embodiment 1, and illustrates the data read of the twincell configured with a memory cells MC1 and MC2 provided in the memoryarray 24 in the complementary reading system. It is assumed that data“0” (a state of a high threshold voltage) is written in the memory cellMC1, and data “1” (a state of a low threshold voltage) is written in thememory cell MC2. Hereinafter, with reference mainly to FIG. 19 and FIG.22, what is different from the timing chart illustrated in FIG. 15 ofEmbodiment 1 is explained; however, what is common to FIG. 15 is notexplained repeatedly.

As is the case with FIG. 15, first at time t1 of FIG. 22, the readaddress is switched, and at time t2, an address fetch signal isoutputted from the flash sequencer (FSQC) 7.

At the next time t3, the driver provided in the row decoders 30 and 31activates a control signal line necessary for the data read of thememory cells MC1 and MC2 based on the address signal. The feature pointin comparison with the case of FIG. 15 is as follows.

(i) The discharge signal supplied to the control signal lines DC_UR andDC_DR is switched to an inactive state (L level), and the charge signalsupplied to the control signal lines CH_URN and CH_DRN is switched to anactive state (L level). Accordingly, the sub bit lines SBL_UR and SBL_DRwhich are added in Embodiment 2 are further precharged.

(ii) As is the case of FIG. 15, the control signal lines YRA_D0N,YRB_D0N, and YRB_D1CN are switched to an active state (L level).Accordingly, the sub bit lines SBL_D0 and SBL_D4 which are coupled tothe memory cells MC1 and MC2 respectively, are electrically coupled tothe output signal lines CBLD and CBLU, respectively. The control signallines YRA_URN, YRA_DRN, YRB_URN, and YRB_DRN which are added inEmbodiment 2 are maintained in an inactive state (H level).

(iii) As is the case of FIG. 15, the control signal lines REF_U andREF_D are maintained in an inactive state (L level). Therefore, thecurrent source CS is not electrically coupled to the output signal linesCBLU and CBLD. The setup of other control signal lines is the same asthe case of FIG. 15.

At the next time t4, the precharge signal PC supplied to the senseamplifier SA by the flash sequencer (FSQC) 7 changes to an inactivestate (H level), and the charge signal supplied from the driver of therow decoders 30 and 31 to the control signal lines CH_U0N, CH_D0N,CH_URN, and CH_DRN changes to an inactive state (H level). As a result,the cell current Ic1 flows in the direction from the downside outputsignal line CBLD to the memory cell MC1 and the cell current Ic2 flowsin the direction from the upside output signal line CBLU to the memorycell MC2. Since the subsequent read operation is the same as the case ofFIG. 15, the explanation thereof is not repeated.

(Write Operation and Erase Operation)

The write operation and erase operation of the nonvolatile memory inEmbodiment 2 are the same as the case of Embodiment 1. Therefore, theexplanation thereof is not repeated.

(Effect)

As described above, in Embodiment 2, the source region of each memorycell of a specific column among each memory array which configures thememory mat 20 is not coupled to the source line. Accordingly, in thereference current reading system, the sub bit line SBL_UR or SBL_DRcorresponding to the specific column is coupled to the output signalline CBLU or CBLD on the side of the reference current. According to thepresent configuration, unlike with Embodiment 1, the MOS transistorswitches provided in the hierarchy sense amplifier band can be separatedinto switches for access to the upside memory array 22 and switches foraccess to the downside memory array 24. Therefore, it is possible toenhance the degree of freedom in design.

<Embodiment 3>

In Embodiment 1 and Embodiment 2, as illustrated in FIG. 6, the memoryblock 21 is configured with the hierarchy sense amplifier band 23 andthe memory arrays 22 and 24 provided in the upper side and the down sideof the hierarchy sense amplifier band 23, and the memory mat 20 isconfigured by arranging plural memory blocks 21 in the column direction.Each hierarchy sense amplifier band 23 is coupled to the sub bit linesSBL provided in the upside memory array 22 and the downside memory array24.

In the semiconductor device according to Embodiment 3, in lieu of thehierarchy sense amplifier band 23 according to Embodiment 1 andEmbodiment 2, one read sense amplifier band 28 is provided per thememory mat 20. The read sense amplifier band 28 is coupled to awrite-system main bit line WMBL provided in common to the memory mat 20.In Embodiment 3, the write-system main bit line WMBL is employed in bothdata read and data write.

According to the above-described configuration, it is possible to reducethe number of the sense amplifier SA, resulting in the reduction of thecircuit area of the flash memory module 6. Hereinafter, with referenceto FIG. 23-FIG. 28, the detailed explanation thereof is made.

(Configuration of a Flash Memory Module)

FIG. 23 is a block diagram illustrating the configuration of a flashmemory module in a semiconductor device according to Embodiment 3. Theblock diagram illustrated in FIG. 23 corresponds to the block diagramillustrated in FIG. 6 according to Embodiment 1.

With reference to FIG. 23, the flash memory module 6 includes a memorymat 20, a read sense amplifier band 28, an output buffer 34, a first rowdecoder 30, a second row decoder 31, a column decoder 32, aninput/output buffer 33, a main-bit-line voltage control circuit 39, arewriting column selector 38, a verification circuit 37, a power supplycircuit 35, and a timing generator 36. What is different from theconfiguration of the flash memory module 6 illustrated in FIG. 6 is thatthe read sense amplifier band 28 is added and that the configuration ofthe memory mat 20 is correspondingly changed.

The memory mat 20 includes a column selection unit 23A and memory arrays22 and 24 provided in both sides (in the column direction) of the columnselection unit 23A, as one constituent unit (that is, the memory block21). In the memory mat 20, plural pieces of such a block 21 are arrangedin the column direction (FIG. 23 illustrates only one memory block 21typically). The configuration of the memory arrays 22 and 24 has beenexplained with reference to FIG. 6, therefore the explanation thereof isnot repeated.

The column selection unit 23A includes sub-bit-line selectors 26U and26D. As explained in FIG. 6, the upside sub-bit-line selector 26Uincludes plural NMOS transistor switches 60U. By switching ON and OFF ofthese NMOS transistor switches 60U, the upside sub-bit-line selector 26Ufunctions as a coupling switch unit which couples selectively the subbit line SBL provided in the upside memory array 22 to the correspondingwrite-system main bit line WMBL. Similarly, the downside sub-bit-lineselector 26D includes plural NMOS transistor switches 60D. By switchingON and OFF of these NMOS transistor switches 60D, the downsidesub-bit-line selector 26D functions as a coupling switch unit whichcouples selectively the sub bit line SBL provided in the downside memoryarray 24 to the corresponding write-system main bit line WMBL.

The read sense amplifier band 28 includes a sense amplifier SA and aread column selector 25A. The sense amplifier SA includes a first and asecond input node, and amplifies the difference between a current whichflows through a first output signal line CBLL coupled to the first inputnode and a current which flows through a second output signal line CBLRcoupled to the second input node, and thereby outputs the comparisonresult of both current values. The output signal of the sense-amplifierSA is transferred to the output buffer (OBUF) 34 via the read-systemmain bit line RMBL extending in the column direction. The detailedconfiguration of the sense amplifier SA is the same as described inEmbodiment 1, therefore the explanation thereof is not repeated.

The read column selector 25A includes PMOS transistor switches 70, 71,76, and 78. By switching these PMOS transistor switches, the read columnselector 25A functions as a coupling switch unit which changes thecoupling between each write-system main bit line WMBL and the outputsignal lines CBLL and CBLR described above. In the case of FIG. 23, themain bit line WMBL coupled to the memory cell MC1, which is employed asa positive cell in the complementary reading system, are coupled to theoutput signal line CBLL via the PMOS transistor switches 70 and 76. Themain bit line WMBL coupled to the memory cell MC2, which is employed asa negative cell in the complementary reading system, are coupled to theoutput signal line CBLR via the PMOS transistor switches 71 and 78.

The read column selector 25A further includes a current source CS andNMOS transistor switches 74 and 75. In the reference current readingsystem, the current source CS is coupled to the output signal line CBLLor CBLR via the NMOS transistor switch 74 or 75, respectively.

The other points of FIG. 23 are the same as those illustrated in FIG. 6,therefore, the same symbol or reference numeral is attached to the sameor corresponding element and the repeated explanation thereof isomitted. The entire configuration of the semiconductor device 1 is thesame as what is explained in FIG. 1, the generating circuit of thecontrol signal CMPLON is the same as what is explained in FIG. 10, andthe configuration of the output buffer 34 is the same as what isexplained in FIG. 12. Accordingly, the repeated explanation thereof isomitted.

The configuration of the sense amplifier SA is the same as what isexplained in FIG. 11. However, the output signal lines CBLL and CBLR inEmbodiment 3 correspond to the output signal lines CBLD and CBLU in FIG.11, respectively.

(Details of the Read-System Circuit)

FIG. 24 is a drawing illustrating the detailed configuration of thecolumn selection unit and the read sense amplifier band illustrated inFIG. 23. FIG. 24 illustrates typically four write-system main bit linesWMBL0-WMBL3, eight sub bit lines SBL_U0-SBL_U7 corresponding to theupside memory array 22, eight sub bit lines SBL_D0-SBL_D7 correspondingto the downside memory array 24, and one read-system main bit lineRMBL0. As is the case with FIG. 7, two sub bit lines SBL are assignedfor every memory array to one write-system main bit line WMBL. Althoughnot shown in FIG. 24, these bit lines are repeatedly provided in the rowdirection in the actual memory cell module 6.

FIG. 24 further illustrates the memory arrays 22 and 24 provided on bothsides of the column selection unit 23A. The configuration of the memoryarrays 22 and 24 has been explained with reference to FIG. 7; therefore,the explanation thereof is not repeated.

The column selection unit 23A includes charging and discharging circuits27U and 27D, in addition to the sub-bit-line selectors 26U and 26Dexplained in FIG. 23. The configuration of the charging and dischargingcircuits 27U and 27D has been explained with reference to FIG. 7,therefore the explanation thereof is not repeated.

The sub-bit-line selector 26D includes NMOS transistor switches60D0-60D7 respectively corresponding to the sub bit lines SBL_D0-SBL_D7,and the control signal lines ZL_D0-ZL_D3. The sub-bit-line selector 26Dillustrated in FIG. 24 is different from the sub-bit-line selector 26Dillustrated in FIG. 7 in that the control signal lines ZL_D2 and ZL_D3are added.

In the sub-bit-line selector 26D, each of the NMOS transistor switches60D0-60D7 is coupled between the corresponding sub bit line SBL and thewrite-system main bit line WMBL assigned to the corresponding sub bitline SBL. The control signal line ZL_D0 is coupled to the gates of theNMOS transistor switches 60D0 and 60D2, and the control signal lineZL_D1 is coupled to the gates of the NMOS transistor switches 60D1 and60D3. Similarly, the control signal line ZL_D2 is coupled to the gatesof the NMOS transistor switches 60D4 and 60D6, and the control signalline ZL_D3 is coupled to the gates of the NMOS transistor switches 60D5and 60D7.

The configuration of the sub-bit-line selector 26U corresponds to theconfiguration of the above-described sub-bit-line selector 26D in whichthe subscript D is replaced with the subscript U; therefore, theexplanation thereof is not repeated. For example, the sub bit linesSBL_D0-SBL_D7 provided in the downside memory array 24 are replaced withthe sub bit lines SBL_U0-SBL_U7 provided in the upside memory array 22,respectively.

As explained in FIG. 23, the read sense amplifier band 28 includes asense amplifier SA and a read column selector 25A. The read columnselector 25A includes PMOS transistor switches 70, 71, and 76-79, NMOStransistor switches 74 and 75, a current source CS, and control signallines YRA_0N, YRA_1N, YRB_N, REF_L, and REF_R. The current source CS isconfigured with an NMOS transistor of which the gate is supplied with aconstant voltage, for example.

The PMOS transistor switches 76-79 correspond to the write-system mainbit lines WMBL0-WMBL4, respectively. Each of the PMOS transistorswitches 76 and 77 is coupled between the corresponding write-systemmain bit line and the common node 72. Each of the PMOS transistorswitches 78 and 79 is coupled between the corresponding write-systemmain bit line and the common node 73. The PMOS transistor switch 70 iscoupled between the common node 72 and the output signal line CBLL. ThePMOS transistor switch 71 is coupled between the common node 73 and theoutput signal line CBLR. The NMOS transistor switch 74 is coupledbetween the common node 72 and the current source CS. The NMOStransistor switch 75 is coupled between the common node 73 and thecurrent source CS.

The control signal line YRA_0N is coupled to the gates of the PMOStransistor switches 76 and 78. The control signal line YRA_1N is coupledto the gates of the PMOS transistor switches 77 and 79. The controlsignal line YRB_N is coupled to the gates of the PMOS transistorswitches 70 and 71. The control signal lines REF_L and REF_R are coupledto the gates of the NMOS transistor switches 74 and 75, respectively.

(On the Path of a Memory Cell Current and a Reference Current in theReference Current Reading System)

With reference to FIG. 24, the following explains on the path of a cellcurrent Ic in reading the data of the memory cell MC1 and the path of areference current Iref.

When reading the data of the memory cell MC1, a word line WLm coupled tothe control gate of memory cell MC1 is activated to an H level.Furthermore, a cell current Ic is generated by activating the controlsignal lines YRA_0N, YRB_N, and ZL_D0. The cell current Ic flows in thedirection from the sense amplifier SA to the source line SL, via theoutput signal line CBLL, the PMOS transistor switches 70 and 76, thewrite-system main bit line WMBL0, the NMOS transistor switch 60D0, andthe memory cell MC1. At the time of data read, the source line SL iscoupled to the ground node VSS.

In order to generate the reference current Iref, the control signal lineREF_R is activated further. The reference current Iref flows in thedirection from the sense amplifier SA to the ground node VSS, via theoutput signal line CBLR, the PMOS transistor switches 71, the NMOStransistor switch 75, and the current source CS. The magnitude of thereference current Iref is adjusted by the current source CS.

When generating the reference current Iref, the PMOS transistor switch60U4 is further set to ON by activating the control signal line ZL_U2.Accordingly, the wiring capacitance of the sub bit line SBL_U4 is addedto the output signal line CBLR on the side of the current source CS. Thewiring capacitance of the sub bit line SBL_U4 has the almost same valueas the wiring capacitance of the sub bit line SBL_D0 coupled to thememory cell MC1. Accordingly, it is possible to make the load of thefirst input node and the load of the second input node almost equal, inthe sense amplifier SA. Therefore, it is possible to make an exactcomparison of the cell current Ic and the reference current Iref (thatis, exact detection of the data of the memory cell MC1).

The sense amplifier SA amplifies the difference between the cell currentIc and the reference current Iref. The output signal of the senseamplifier SA is transferred to the output buffer OBUF via theread-system main bit line RMBL0.

(On the Path of a Memory Cell Current in the Complementary ReadingSystem)

FIG. 25 is a drawing illustrating a path of a memory cell current in thecomplementary reading system in the circuit configuration illustrated inFIG. 24. When reading the data of the memory cells MC1 and MC2configuring a twin cell, the path of a cell current Ic1 flowing throughthe memory cell MC1 and the path of a cell current Ic2 flowing throughthe memory cell MC2 are illustrated in FIG. 25.

When reading the data of the memory cells MC1 and MC2, the word line WLmcoupled common to the memory cells MC1 and MC2 is activated. In thisstate, the control signal lines YRA_0N, YRB_N, ZL_D0, and ZL_D2 areactivated to generate the cell currents Ic1 and Ic2. The cell currentIc1 flows in the direction from the sense amplifier SA to the sourceline SL, via the output signal line CBLL, the PMOS transistor switches70 and 76, the write-system main bit line WMBL0, the NMOS transistorswitch 60D0, and the memory cell MC1. The cell current Ic2 flows in thedirection from the sense amplifier SA to the source line SL, via theoutput signal line CBLR, the PMOS transistor switches 71 and 78, thewrite-system main bit line WMBL2, the NMOS transistor switch 60D4, andthe memory cell MC2. At the time of data read, the source line SL iscoupled to the ground node VSS.

The sense-amplifier SA amplifies the difference between the cell currentIc1 and the cell current Ic2. The output signal of the sense amplifierSA is transferred to the output buffer OBUF via the read-system main bitline RMBL0. In the complementary reading system, the control signallines REF_L and REF_R are always in an inactive state (L level).

(Drive of Control Signals Used by the Read Column Selector and theColumn Selection Unit)

FIGS. 26A and 26B are drawings illustrating the configuration of adriver circuit for driving each control signal line in the read senseamplifier band and the column selection unit illustrated in FIG. 24.FIG. 26A illustrates the configuration of the driver circuit for thecontrol signal lines provided in the read sense amplifier band 28illustrated in FIG. 24. FIG. 26B illustrates the configuration of thedriver circuit for the control signal lines provided in the columnselection unit 23A illustrated in FIG. 24.

Among the input signals of FIG. 26A and FIG. 26B, a control signalCMPLON is a signal for distinguishing between the complementary readingsystem and the reference current reading system to be applied to thememory cell of a read target and a write target, and is supplied fromthe flash sequencer (FSQC) 7 illustrated in FIG. 1. Other input signalsare generated by the column decoder (CDEC) 32 based on a control signalfrom the flash sequencer (FSQC) 7, a control signal from the timinggenerator 36 illustrated in FIG. 6, and an address supplied to theinput/output buffer (IOBUF) 33.

With reference to FIG. 26A, the signals supplied to the control signallines YRB_N, YRA_U0N, and YRA_U1N are generated respectively byinverting the control signals YRB_in, YRA_U0_in, and YRA_U1_in by theinverters 260, 263, and 264.

Signals supplied to the control signal lines REF_U and REF_D aregenerated by the logic gates 261 and 262, respectively. When theCMPLON=“0” (the reference current reading system), the logic gate 261outputs a signal obtained by amplifying the control signal REF_L in to acontrol signal line REF_L. When the CMPLON=“1” (the complementaryreading system), the logic gate 261 outputs a signal of an L level (“0”)irrespective of the control signal REF_L in, to deactivate the controlsignal line REF_L. Similarly, when the CMPLON=“0” (the reference currentreading system), the logic gate 262 outputs a signal obtained byamplifying the control signal REF_R_in to the control signal line REF_R.When the CMPLON=“1” (the complementary reading system), the logic gate262 outputs a signal of an L level (“0”) irrespective of the controlsignal REF_R_in, to deactivate the control signal line REF_R.

With reference to FIG. 26B, signals supplied to control signal linesZL_U0, ZL_U1, ZL_D0, and ZL_D1 are generated by amplifying the controlsignals ZL_U0_in, ZL_U1_in, ZL_D0_in, and ZL_D1_in by the buffers 265,266, 277, and 278, respectively. Signals supplied to control signallines DC_U0, DC_U1, DC_D0, and DC_D1 are generated by amplifying thecontrol signals DC_U0_in, DC_U1_in, DC_D0_in, and DC_D1_in by thebuffers 271, 272, 275, and 276, respectively.

Signals supplied to control signal lines CH_U0N, CH_U1N, CH_D0N, andCH_D1N are generated by inverting and amplifying control signalsCH_U0_in, CH_U1_in, CH_D0_in, and CH_D1_in by the inverters 269, 270,273, and 274, respectively.

Signals selected by the selectors 267, 268, 279, and 280 are supplied tocontrol signal lines ZL_U2, ZL_U3, ZL_D2, and ZL_D3, respectively.Specifically, the selector 267 outputs the control signal ZL_U2 in tothe control signal line ZL_U2, when the CMPLON=“0” (the referencecurrent reading system), and outputs the control signal ZL_U0_in to thecontrol signal line ZL_U2 when the CMPLON=“1” (the complementary readingsystem). Accordingly, in the complementary reading system, the sub bitline SBL_U0 or SBL_U2 to which the positive cell is coupled, and the subbit line SBL_U4 or SBL_U6 to which the corresponding negative cell iscoupled can be accessed without fail.

Similarly, the selector 268 outputs the control signal ZL_U3_in to thecontrol signal line ZL_U3 when the CMPLON=“0” (the reference currentreading system), and outputs the control signal ZL_U1_in to the controlsignal line ZL_U3 when the CMPLON=“1” (the complementary readingsystem). The selector 279 outputs the control signal ZL_D2_in to thecontrol signal line ZL_D2 when the CMPLON=“0” (the reference currentreading system), and outputs the control signal ZL_D0_in to the controlsignal line ZL_D2 when the CMPLON=“1” (the complementary readingsystem). The selector 280 outputs the control signal ZL_D3_in to thecontrol signal line ZL_D3 when the CMPLON=“0” (the reference currentreading system), and outputs the control signal ZL_D1_in to the controlsignal line ZL_D3 when the CMPLON=“1” (the complementary readingsystem).

(Read Operation in the Reference Current Reading System)

FIG. 27 is a timing chart illustrating an example of read operation inthe reference current reading system according to Embodiment 3. Withreference mainly to FIG. 23, FIG. 24, and FIG. 27, the followingexplains the procedure of the data read of the memory cell MC1 providedin the memory array 24, in the reference current reading system. In thefollowing explanation, it is assumed that data “0” (a state of a highthreshold voltage) is written in the memory cell MC1.

First, at time t1 of FIG. 27, the address information is switched. Attime t2, the flash sequencer (FSQC) 7 illustrated in FIG. 1 outputs anaddress fetch signal. In response to this signal, the input/outputbuffer (IOBUF) fetches address information. The fetched addressinformation is decoded by the column decoder 32 and the row decoders 30and 31.

At time t3, the driver provided in the row decoders 30 and 31 and thecolumn decoder 32 activates a control signal line necessary for the dataread of the memory cell MC1 based on the address signal. Specifically,it is as follows.

(i) The discharge signal supplied to the control signal lines DC_U0 andDC_D0 is switched to an inactive state (L level), and the control signallines DC_U1 and DC_D1 are maintained in an active state (H level). Onthe other hand, the charge signal supplied to the control signal linesCH_U0N and CH_D0N is switched to an active state (L level), and thecontrol signal lines CH_U1N and CH_D1N are maintained in an inactivestate (H level). Accordingly, at least the sub bit line SBL_D0 to whichthe memory cell MC1 as the read target is coupled, and the sub bit lineSBL_U4 of the upside memory array 22 are precharged to the power supplypotential, and the adjoining sub bit lines SBL_D1, SBL_U3, and SBL_U5are maintained at the ground potential.

(ii) The control signal lines YRA_0N and YRB_N are switched to an activestate (L level), and the control signal lines ZL_U2 and ZL_D0 areswitched to an active state (H level). Accordingly, the sub bit lineSBL_D0 to which the memory cell MC1 is coupled is electrically coupledto the output signal line CBLL via the write-system main bit line WMBL0,and the sub bit line SBL_U4 is electrically coupled to the output signalline CBLR via the write-system main bit line WMBL2.

(iii) By setting the control signal line REF_R_in an active state (Hlevel), the current source CS is electrically coupled to the outputsignal line CBLR.

(iv) The word line WLm coupled to the memory cell MC1 as the read targetis switched to an active state (H level).

(v) When reading the data of the memory cell coupled to the sub bitlines SBL_D0-SBL_D3 or SBL_U0-SBL_U3, the selection signal SELU suppliedto the selector 148 of the sense amplifier SA (refer to FIG. 11) is setat an L level (“0”).

At the next time t4, the precharge signal PC supplied to the senseamplifier SA by the flash sequencer (FSQC) 7 changes to an inactivestate (H level), and the charge signal supplied from the driver of therow decoders 30 and 31 to the control signal lines CH_U0N and CH_D0Nchanges to an inactive state (H level). As a result, the cell current Icflows in the direction from the output signal line CBLL to the memorycell MC1 and the reference current Iref flows in the direction from theoutput signal line CBLR to the current source CS. Since data “0” (astate of a high threshold voltage) is written in the memory cell MC1,the cell current Ic is smaller than the reference current Iref.Therefore, the potential of the output signal line CBLR becomes lowerthan the potential of the output signal line CBLL.

At the next time t5, the flash sequencer (FSQC) 7 changes the senseenable signal SEN outputted to the sense amplifier SA to an active state(H level). Accordingly, the NMOS transistor 147 illustrated in FIG. 11is set to ON, and the latch circuit 136 begins to operate. The latchcircuit 136 amplifies the potential difference between the output signallines CBLL and CBLR. As a result, the potential of the output signalline CBLR falls to the ground potential (VSS), and the potential of theoutput signal line CBLL rises to the power supply potential (VDD). Thepotential of the output signal line CBLR is outputted to the read-systemmain bit line RMBL via the selector 148 and the three-state buffer.

Furthermore, at time t5, the sense enable signal SEN is activated, andthe control signal SEN_OR outputted to the output data buffer (OBUF) 34also changes to an active state (H level). Accordingly, the voltagesignal outputted from the sense amplifier SA to the read-system main bitline RMBL is transmitted to the output data buffer (OBUF) 34 via theread-system main bit line RMBL, and is outputted from the output databuffer 34 to the corresponding data bus of the high speed bus (HBUS).

(Read Operation in the Complementary Reading System)

FIG. 28 is a timing chart illustrating an example of read operation inthe complementary reading system according to Embodiment 3. Withreference mainly to FIG. 23, FIG. 25, and FIG. 28, the followingexplains the procedure of reading the data of the twin cell configuredwith the memory cells MC1 and MC2 provided in the memory array 24, inthe complementary reading system. In the following explanation, it isassumed that data “0” (a state of a high threshold voltage) is writtenin the memory cell MC1 and that data “1” (a state of a low thresholdvoltage) is written in the memory cell MC2.

As is the case with FIG. 27, first, at time t1 of FIG. 28, the readaddress is switched, and at time t2, the address fetch signal isoutputted from the flash sequencer (FSQC) 7.

At time t3, the driver provided in the row decoders 30 and 31 activatesa control signal line necessary for the data read of the memory cellsMC1 and MC2 based on the address signal. Specifically, it is as follows.

(i) The discharge signal supplied to the control signal lines DC_U0 andDC_D0 is switched to an inactive state (L level), and the control signallines DC_U1 and DC_D1 are maintained in an active state (H level). Onthe other hand, the charge signal supplied to the control signal linesCH_U0N and CH_D0N is switched to an active state (L level), and thecontrol signal lines CH_U1N and CH_D1N are maintained in an inactivestate (H level). Accordingly, at least the sub bit line SBL_D0 andSBL_D4 to which the memory cells MC1 and MC2 as the read target arecoupled and the sub bit lines SBL_U0 and SBL_U4 of the same column ofthe upside memory array 22 are precharged to the power supply potential,and the adjoining sub bit lines SBL_D1, SBL_U1, SBL_D3, SBL_U3, SBL_D5,and SBL_U5 are maintained at the ground potential.

(ii) The control signal lines YRA_0N and YRB_N are switched to an activestate (L level), and the control signal lines ZL_D0 and ZL_D2 areswitched to an active state (H level). Accordingly, the sub bit linesSBL_D0 and SBL_D4 which are coupled to the memory cells MC1 and MC2respectively, are electrically coupled to the output signal lines CBLLand CBLR, respectively.

(iii) The control signal lines REF_U and REF_D are maintained in aninactive state (L level); accordingly, the current source CS is notelectrically coupled to the output signal lines CBLL and CBLR.

(iv) The word line WLm coupled common to the memory cell MC1 and MC2 asthe read target is switched to an active state (H level).

(v) In the complementary reading system, the selection signal SELUsupplied to the selector 148 of the sense amplifier SA (refer to FIG.11) is set at an L level (“0”).

At the next time t4, the precharge signal PC supplied to the senseamplifier SA by the flash sequencer (FSQC) 7 changes to an inactivestate (H level), and the charge signal supplied from the driver of therow decoders 30 and 31 to the control signal lines CH_U0N and CH_D0Nchanges to an inactive state (H level). As a result, the cell currentIc1 flows in the direction from output signal line CBLL to the memorycell MC1, and the cell current Ic2 flows in the direction from theoutput signal line CBLR to the memory cell MC2. Since data “0” (a stateof a high threshold voltage) is written in the memory cell MC1 and data“1” (a state of a low threshold voltage) is written in the memory cellMC2, the cell current Ic1 is smaller than the cell current Ic2.Therefore, the potential of the upside output signal line CBLR becomeslower than the potential of the downside output signal line CBLL.

At the next time t5, the flash sequencer (FSQC) 7 changes the senseenable signal outputted to the sense amplifier SA to an active state (Hlevel). The subsequent operations are the same as that of the referencecurrent reading system; accordingly the repeated explanation thereof isomitted.

(Write Operation and Erase Operation)

The write operation and erase operation of the nonvolatile memory inEmbodiment 3 are the same as the case of Embodiment 1. Therefore, theexplanation thereof is not repeated.

(Effect)

As described above, in Embodiment 3, one read sense amplifier band 28 isprovided to the memory mat 20, in lieu of the hierarchy sense amplifierband 23 according to Embodiment 1 and Embodiment 2. The read senseamplifier band 28 is coupled to the write-system main bit line WMBLprovided in common in the memory mat 20. The sub bit line SBL of eachmemory array is coupled to the corresponding write-system main bit lineWMBL via the sub bit-line selectors 26U and 26D. According to thisconfiguration, it is possible to reduce the number of the senseamplifier SA, resulting in the reduction of the circuit area of theflash memory module 6.

<A Modified Example>

The nonvolatile memory may store the same data in plural rows of thesame column of the memory array at the time of data write. In this case,the word line corresponding to the plural rows in which the same datahas been stored is activated simultaneously at the time of data read.Accordingly, it is possible to perform the data read even when there isa little current flowing through each memory cell, leading to anenhanced read margin.

As described above, the invention accomplished by the present inventorshas been concretely explained based on the embodiments. However, it isneedless to say that the present invention is not restricted to theembodiments as described above, and it can be changed variously in therange which does not deviate from the gist.

What is claimed is:
 1. A semiconductor device comprising: a first memoryarray including a plurality of memory cells arranged in a matrix, aplurality of bit lines respectively corresponding to columns of thememory cells, and a plurality of word lines respectively correspondingto rows of the memory cells; a sense amplifier configured to amplify thedifference of currents flowing through a first and a second outputsignal lines; a coupling switch unit configured to switch couplingbetween the first and second output signal lines and the bit lines ofthe first memory array based on specified modes including first andsecond modes, the first mode performing data read by comparing a currentflowing through a memory cell as a read target and the second modeperforming data read by comparing currents flowing through first andsecond memory cells as a read target storing complementary data; and asecond memory array including a plurality of memory cells arranged in amatrix, a plurality of bit lines respectively corresponding to columnsof the memory cells, and a plurality of word lines respectivelycorresponding to rows of the memory cells, wherein, in the first mode,the coupling switch unit couples a bit line of the first memory arraycorresponding to the memory cell as the read target to the first outputsignal line and couples a reference current source to the second outputsignal line, wherein, in the second mode, the coupling switch unitcouples the first and second bit lines of the first memory arraycorresponding to the first and second memory cells as the read target tothe first and second output signal lines respectively, wherein thecoupling switch unit further switches coupling between the first and thesecond output signal line and the bit lines of the second memory array,and wherein, when data of a memory cell included in the first memoryarray is read in the first mode, the coupling switch unit couples a bitline of the first memory array corresponding to the memory cell as theread target to the first output signal line, and couples any one of thebit lines of the second memory array and the reference current source tothe second output signal line.
 2. The semiconductor device according toclaim 1, wherein each of the memory cells comprises: a first mainelectrode; a second main electrode; and a control electrode, wherein thecontrol electrode is coupled to the corresponding word line, wherein thefirst main electrode is coupled to the corresponding bit line, whereinthe second main electrode is coupled to a reference potential nodeexcept for a memory cell of a specific column which is not employed fordata storage, and the second main electrode of each memory cell of thespecific column of the first memory array is not coupled to thereference potential node.
 3. The semiconductor device according to claim1, wherein semiconductor device further comprises: a plurality of mainbit lines provided for every columns of the first memory array and forevery columns of the second memory array, and shared by the first andthe second memory array, wherein the coupling switch unit comprises: afirst switch unit operable to switch coupling between each of the mainbit lines and the bit line of the corresponding columns of the firstmemory array; a second switch unit operable to switch coupling betweeneach of the main bit lines and the bit line of the corresponding columnsof the second memory array; and a third switch unit operable to switchcoupling between the main bit lines and the first and the second outputsignal line, wherein complementary data read in second mode are storedin the first and the second memory cell corresponding to different mainbit lines, respectively, wherein, when data of a memory cell included inthe first memory array is read in the first mode, the first switch unitcouples the bit line of the first memory array corresponding to thememory cell as the read target to the corresponding first main bit line,the second switch unit couples one of the corresponding bit lines of thesecond memory array to the second main bit line different from the firstmain bit line, and the third switch unit couples the first main bit lineto the first output signal line and couples the second main bit line andthe reference current source to the second output signal line, andwherein, when complementary data of the first and the second memory cellincluded in the first memory array are read in the second mode, thefirst switch unit couples the bit line of the first memory arraycorresponding to the first memory cell to the corresponding first mainbit line and couples the bit line of the first memory arraycorresponding to the second memory cell to the corresponding second mainbit line, and the third switch unit couples the first and the secondmain bit line to the first and the second output signal line,respectively.
 4. The semiconductor device according to claim 1, wherein,at the time of data write, the nonvolatile memory stores identical dataat a plurality of rows of an identical column of the first memory array,and at the time of data read, the nonvolatile memory activatessimultaneously the word lines corresponding to the rows in which theidentical data have been stored.
 5. The semiconductor device accordingto claim 1, wherein the nonvolatile memory further comprises: acontroller configured to create a control signal to specify which of thecomplementary reading system and the reference current reading system isemployed for the data read, depending on whether a read address receivedfrom an exterior agrees with address information indicating acomplementary data storing area, stored in advance, and wherein thecoupling switch unit switches the coupling between the each bit line andthe first and the second output signal line, based on the read addressand the control signal.
 6. The semiconductor device according to claim1, wherein the semiconductor device performs as a reference currentreading system in the first mode, and performs as a complementaryreading system in the second mode.